Mobility–stability trade-off in oxide thin-film transistors

Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid

“…The least hysteresis observed in AI-PTs revealed that even unavoidable IGZO surface defects during the QD layer formation can also be reduced by the Al 2 O 3 penetration and infiltration process. Hosono's group showed that surface trap states in oxide semiconductors (which degrade optoelectronic properties such as reliability under illumination and exacerbate the PPC problem) can also be eliminated by depositing a passivation layer on the oxide semiconductors 37 , 38 . In addition, the reduction of QD/IGZO interface traps by the Al 2 O 3 infilling process eliminates Fermi-level pinning, lowers the barriers at the interface 39 , 40 , and consequently improves the charge transfer at the heterojunction.…”

Insights into first-principles characterization of the monoclinic VO2(B) polymorph via DFT + U calculation: electronic, magnetic and optical properties

“…Transition metal oxides [1][2][3] have been widely studied during the last decades because of their unique physical properties that are exploitable in the areas of dielectrics, 4,5 thermoelectricity, [6][7][8] catalysis, [9][10][11] microelectronics, 12,13 and thin-lm transistors. [14][15][16][17][18] Vanadium oxides are of particular interest due to these materials provide outstanding advantages in many optoelectronic devices, such as smart windows, [19][20][21] sensors, [22][23][24] and resistive memories. [25][26][27][28][29] They have received considerable attention since they are studied as a metal-insulator transition (MIT) material.…”

Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects

“…[ 16 ] However, high‐mobility materials are very sensitive to external factors due to high carrier doping by oxygen vacancies, hydrogen and carbon, and low ionization energy caused by conduction band dispersion. [ 17 ] For this reason, when TFTs are manufactured with high mobility materials such as IZO, the V th negative shift and off current increase limits the realization of transfer characteristics. In addition, the material sensitivity to external factors means that the device reliability is also difficult to control.…”