MOCVD based zinc diffusion process for planar InP/InGaAs avalanche photodiode fabrication

Pitts, O.J.; Hisko, M.; Benyon, W.; SpringThorpe, A. J.

doi:10.1109/iciprm.2012.6403364

Cited by 2 publications

(1 citation statement)

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“…Chamber and furnace diffusion methods have been proposed to drive p-type dopant into InP/InGaAs heterostructure by selective-area diffusion. For example, the metalorganic vapor phase deposition (MOCVD) with dimethylzinc (DMZ) or diethylzinc (DEZ) source [14][15][16][17][18][19] is a chamber diffusion method, which can diffuse a 4 inch wafer, but its cost is high. The furnace diffusion has some disadvantages, such as the lack of lateral uniformity, poor reproducibility, and restriction of wafer size.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

et al. 2017

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Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace. The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy (MBE) has been investigated by photoluminescence (PL) measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 °C for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process. Based on the above Zn-diffusion technique, a 50 μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of −5 V and a high breakdown voltage of larger than 41 V (I < 10 μA). In addition, a high responsivity of 0.81 A/W at 1.31 μm and 0.97 A/W at 1.55 μm was obtained in the developed PIN photodetector.

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Section: Introductionmentioning

confidence: 99%

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

et al. 2017

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Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition*

Teng

Miao

et al. 2020

Chinese Phys. Lett.

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Mid-wavelength infrared planar photodiodes were demonstrated, in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal–organic chemical vapor deposition reactors. The formation of a planar homojunction was confirmed by secondary ion mass spectroscopy and its I–V characteristics. A cut-off wavelength around 5 μm was determined in 77 K optical characterization, and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640 μm diameter. These preliminary results were obtained despite the structural degradation revealed by x-ray diffraction, and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.

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MOCVD based zinc diffusion process for planar InP/InGaAs avalanche photodiode fabrication

Cited by 2 publications

References 10 publications

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition*

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