MOCVD growth and Mg-doping of InAs layers

On Approach to Optimize Manufacturing of a Transistors with Two Sources to Decrease their Dimensions

“…Dopant diffusion coefficient in the substrate is smaller than in epitaxial layer. Squares are the experimental data from [21]. Circles are the experimental data from [22] Fig.2b.…”

“…21.0003 between The Ministry of education and science of the Russian Federation and Lobachevsky State University of Nizhni Novgorod.…”