2005
DOI: 10.1007/s00339-004-2865-x
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MOCVD growth and properties of ZnO films using dimethylzinc and oxygen

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Cited by 57 publications
(34 citation statements)
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“…It is not straightforward to identify difference in the dominant defect species in quenched and slow-cooled sample. Probably, some oxygen-antisite (O Zn ) may be formed [110,168] during slow cooling in air. We have carried out room temperature PL experiment on the 4-h annealed samples (not shown).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…It is not straightforward to identify difference in the dominant defect species in quenched and slow-cooled sample. Probably, some oxygen-antisite (O Zn ) may be formed [110,168] during slow cooling in air. We have carried out room temperature PL experiment on the 4-h annealed samples (not shown).…”
Section: Resultsmentioning
confidence: 99%
“…Suitable choice of temperature [66,[109][110][111], time [112,113] and annealing ambient environment [76,111,114], rate of heating and cooling of annealing [22,115,116] has been proved beneficial to monitor material properties in a controllable fashion. However, an effective control over thermally generated unwanted defects could not be established till date.…”
Section: Heat Treatment (Annealing)mentioning
confidence: 99%
“…[48][49][50] At the same time, the intensity of the O1s spectra increases, and the peaks tend to shift to lower binding energies after beading with ZnO nanoparticles, as shown in Figure 5c. Such peak shifts are due to the fact that both the oxygen in ZnO (530.6-531 eV) [21,51] and in CO (about 531.3 eV) have lower binding energies than the oxygen in C-O (about 533 eV). [52,53] Figure 5d shows that typical Zn2p spectra are observed from ZnO-beaded CNT samples and the peak positions remain constant.…”
mentioning
confidence: 91%
“…ZnO and ZnO NRs are used as blocking and electron transport layer, respectively. It is well known the crystallization of ZnO film is enhanced by annealing [21][22][23][24]. To obtain high quality ZnO NRs, the sputtering ZnO seed layer is annealed at 500 in an oxygen atmosphere.…”
Section: Resultsmentioning
confidence: 99%