MOCVD growth assessment of the first all monolithic 1.56 μm VCSELs with GaInAlAs/InP system

Abstract

Using an InP lattice matched InGaAlAdInAlAs system we have grown in a single epitaxial step the first all-monolithic vertical laser structure on InP substrate. Pulse lasing at 1 S6pm has been obtained up to +55"C with 45pm diameter planar diodes defined by proton implantation. Thermal resistance of bottom emitting lasers about 4 2 0 W has been estimated from Fabry-Perot cavity wavelength shift. The reported characterizations indicate the potential of this material system laser for CW operation and for a simple large-scale industrial processing.