MOCVD growth of AlN/GaN DBR structures under various ambient conditions

Yao, H. H.; Lin, Chia−Feng; Kuo, Hao‐Chung; Wang, S.C

doi:10.1016/j.jcrysgro.2003.10.062

Cited by 33 publications

(13 citation statements)

References 26 publications

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“…Measured by a tapping mode AFM, the roughnesses in an area of 5 m×5 m were 3.18, 2.54 and 2.37 nm for samples S1, S2 and S3, respectively. These values were much smaller than the result of 8 nm reported by Yao et al [9]. Until now, the best result is 3.5 nm reported by Huang et al [10].…”

Section: Methodscontrasting

confidence: 66%

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Shang

Zhang

et al. 2010

Sci. China Technol. Sci.

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We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures. MOCVD, DBR, high-reflectivity, nitrideCitation:Wu C M, Shang J Z, Zhang B P, et al. Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition.

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Section: Methodscontrasting

confidence: 66%

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Shang

Zhang

et al. 2010

Sci. China Technol. Sci.

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“…The conventional approach to achieve high finesse cavities in the GaAs-system is to grow fully epitaxial structures with distributed Bragg reflectors (DBRs) grown before and after the resonant cavity. However in GaN-AlGaN based microcavities the growth of such structures is extremely challenging due to the build up of mismatch strain and subsequent cracking of the structures [9][10][11][12][13][14][15]. In spite of this difficulty we have recently reported the first high reflectivity AlGaN-AlGaN Bragg mirrors in the ultraviolet spectral region [16], following earlier reports of GaN-AlGaN structures in the blue [14].…”

mentioning

confidence: 75%

AlGaN‐based Bragg mirrors and hybrid microcavities for the ultra‐violet spectral region

Alyamani

Sanvitto

Wang

et al. 2005

phys. stat. sol. (c)

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Epitaxially grown AlGaN-AlGaN Bragg mirrors and AlInGaN-AlGaN quantum well cavity regions designed for operation in the ultra-violet spectral region are reported. Full cavities are completed by deposition of dielectric top mirrors. We obtain high AlGaN-AlGaN mirror reflectivities of up to 94%, and cavity Q-values close to 100. We also demonstrate the successful growth of 2.5nm linewidth quantum wells on 25 layer-repeat Bragg mirrors. These results are promising first steps towards the realisation of AlGaNbased microcavity polariton devices. -6]. These materials are very promising candidates for room temperature lasers based on strong exciton-photon coupling [7,8]. In order to achieve strong coupling in GaN based systems, there is a requirement for cavities with high Q-factors (in excess of ~200, corresponding to reflectivities greater than ~95%) and relatively narrow QWs of line widths ~20-40 meV. The conventional approach to achieve high finesse cavities in the GaAs-system is to grow fully epitaxial structures with distributed Bragg reflectors (DBRs) grown before and after the resonant cavity. However in GaN-AlGaN based microcavities the growth of such structures is extremely challenging due to the build up of mismatch strain and subsequent cracking of the structures [9][10][11][12][13][14][15]. In spite of this difficulty we have recently reported the first high reflectivity AlGaN-AlGaN Bragg mirrors in the ultraviolet spectral region [16], following earlier reports of GaN-AlGaN structures in the blue [14].Most attempts at GaN or AlGaN-based microcavities rely on the use of either hybrid structures containing an epitaxially grown lower Bragg mirror, cavity region and upper dielectric Bragg mirror [17][18][19], the approach we follow here, or fully dielectric structures composed of upper and lower dielectric DBRs, surrounding a GaN-based active region. Polariton anticrossing at temperatures as high as 300 K has recently been reported in double dielectric structures [20], although the challenge in the fabrication of such structures is considerable, relying on the development of advanced etching technologies.In this paper we present the fabrication of AlGaN-based hybrid microcavity structures with the bottom DBR and cavity grown by low pressure MOCVD, and the cavity completed by upper mirror dielectric stack deposition, all operating in the ultraviolet spectral region. This work builds on our recent report of high reflectivity AlGaN-AlGaN Bragg mirrors in the ultraviolet spectral region [16].

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“…For the R spectra of samples A and B, the interference features resulting from the DBR stacks and the interface between sample and air are clearly observed for the low and high energy regions. It is found that a high reflectivity stop band including the cavity dips located in the middle region and shifted to higher energies for samples from A to E. Based on the previous study [2], we know that the blue shift of the stop band has been caused by a decrease of thickness of the AlN layers in DBR stacks. The thinner AlN layer results the larger blue shift.…”

Section: Resultsmentioning

confidence: 77%

Reflectance and photoluminescence studies of InGaN/GaN multiple‐quantum‐well structures embedded in an asymmetric microcavity

Lin

Shiu

Lin

2006

Physica Status Solidi (b)

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Using reflectance (R) and photoluminescence (PL) measurements InGaN/GaN multiple-quantum-well (MQW) structures embedded in an asymmetric microcavity with different thickness of stacking pairs have been studied. The asymmetric microcavity structures are composed of a cavity sandwitched between the air/semiconductor interface and a mirror using distributed Bragg reflector (DBR). For the DBR with thinner AlN layers the high-reflectivity stop band locates at higher photon energy. The luminescence efficiency and the spectrum of InGaN/GaN multiple-quantum-well structures will be modified by the microcavity. A comparison of PL with R spectra shows that the emission efficiency can be enhanced by matching up the luminescence spectrum coming from the MQW and the high-reflectivity stop band. From the blue shift of the cavity modes as a function of incident angles the refractive index and cavity length can be determined. By measuring the PL spectra as a function of emission angle, it is found that the PL spectra were predominatly determined by microcavity resonances. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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MOCVD growth of AlN/GaN DBR structures under various ambient conditions

Cited by 33 publications

References 26 publications

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

AlGaN‐based Bragg mirrors and hybrid microcavities for the ultra‐violet spectral region

Reflectance and photoluminescence studies of InGaN/GaN multiple‐quantum‐well structures embedded in an asymmetric microcavity

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