MOCVD growth of InAsN for infrared applications

Naoi, H.; Naoi, Yoshiki; Sakai, Shiro

doi:10.1016/s0038-1101(96)00236-5

Cited by 68 publications

(35 citation statements)

References 4 publications

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“…Because InAs which is the host material of InAsN is a narrow-gap semiconductor, InAsN is potentially useful for infrared applications. For this characteristic feature, several attempts to grow InAsN films and quantum well structures have been done by metalorganic vapor phase epitaxy (MOVPE) [2][3][4] and molecular beam epitaxy (MBE) [5][6][7][8][9]. The bandgap reduction, however, is hardly observed in bulk InAsN films grown by MBE due to the dominant Burstein-Moss (BM) effect (or band-filling effect) caused by the highconcentration free electrons associated with the N incorporation [6,7].…”

Section: Introductionmentioning

confidence: 99%

MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer

Kuboya

Nakajima

Katayama

et al. 2006

Physica Status Solidi (b)

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InAsN films of N content up to 3.5% without phase separation were grown on GaAs(001) substrates with a 1.9 µm-thick InAs buffer layer by metalorganic vapor phase epitaxy (MOVPE). In order to grow the InAsN films with a high N content at low temperature that assures a non-equilibrium growth environment, 1,1-dimetylhydrazine (DMHy) and tertiarybutylarsine (TBAs), which can be efficiently decomposed at low temperatures, were adopted as the N and As precursors, respectively. The electron concentration evaluated by the Hall measurement increased with increasing N content and the electrons were degenerated, while the fundamental absorption edge which was determined by the FT-IR absorption spectroscopy showed a blue-shift with increasing N content. These results indicate that the Burstein -Moss effect (or band filling effect) is dominant over the bandgap reduction expected from the bandgap bowing.

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Section: Introductionmentioning

confidence: 99%

MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer

Kuboya

Nakajima

Katayama

et al. 2006

Physica Status Solidi (b)

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“…Figure 7 shows a collection of RT band gap energy values published in the literature for the InAsN alloy, as obtained from PL and absorption measurements. 3,5,9,11,12 The data from the present work has also been included in the figure for completeness. Here, in order to obtain a recommended value for the RT coupling constant C MN for InAsN, we use Eq.…”

Section: Pl and Optical Absorptionmentioning

confidence: 99%

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

Ibáñez

Oliva

Mare

et al. 2010

Journal of Applied Physics

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We perform a structural and optical characterization of InAs 1−x N x epilayers grown by molecular beam epitaxy on InAs substrates ͑x Շ 2.2%͒. High-resolution x-ray diffraction ͑HRXRD͒ is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ͑ToF-SIMS͒ measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing ͑BAC͒ model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C NM = 2.0Ϯ 0.1 eV.

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“…Since the early pioneering work of Kondow et al [1], enormous efforts have been devoted to study the growth, structural, electronic and optical properties of dilute III-V nitride InAsN alloys [2][3][4][5][6][7][8][9][10][11][12][13][14][15]. This system is currently attracting significant attention for a wide range of potential optoelectronic applications in the mid-infrared 2-5 m wavelengths range.…”

Section: Introductionmentioning

confidence: 99%