MOCVD of CeO2 and SiO2 Mixture Films Using Alkoxy Sources

Matsumura, Takashi; Furuya, Tomonari; Satô, Tadao; Okabe, Yoshinobu; Suzuki, Satoshi; Ishibashi, Keiji; Yamamoto, Y.

doi:10.1149/2.0041512ssl

Cited by 3 publications

(1 citation statement)

References 2 publications

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“…The other type is a mixed oxide of CeO 2 and SiO 2 . We deposited a mixed oxide of CeO 2 and SiO 2 using Metal Organic Chemical Vapor Deposition (MOCVD) with the compositional ratio of CeO 2 :SiO 2 = 2:1 [11][12][13]. The deposited dielectric film by MOCVD with intermittent Si(OC 2 H 5 ) 4 introduction was based on the idea that the decomposition temperature of tetraethylorthosilicate (TEOS) can be lowered by the hydrolysis utilizing H 2 O generated during the CeO 2 deposition.…”

Section: Device Structure and Fabrication Processmentioning

confidence: 99%

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

et al. 2016

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Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/cm (SiO 2 (k = 3.9)). The diodes were fabricated using the high-k mixed oxide of SiO 2 and CeO 2 with k = 12.3. I-V characteristics of the diode with a field plate showed a breakdown voltage above 2 kV with an increased avalanche resistance. This means that the electric field reduces at the periphery of the mesa-etched p-n junction and is uniformly formed across the whole p-n junction. It is clear that high-k dielectric film passivation and filed plate termination are essential techniques for GaN power devices.

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Section: Device Structure and Fabrication Processmentioning

confidence: 99%

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

et al. 2016

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An Amidinato-Cerium Compound and Its Application as CVD Precursor for CeOx-Based Materials

Wang

Liu

et al. 2020

Russ J Appl Chem

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Vertical GaN Diode with Field Plate Termination using High K Dielectrics

Yoshino

Horikiri²,

Ohta

et al. 2016

IEEJ Trans.EIS

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GaN high voltage diodes with high-k dielectrics passivation underneath the filed plate are demonstrated. Simulation results at reverse voltage of 1000V showed that the maximum electric field near the mesa-etched pn junction edges covered with film of dielectric constant k value of 10 was reduced to 2.3 MV/cm from 3.2 MV/cm (SiO 2 (k = 3.9)). Mesa structures of pn junction diodes were fabricated by ICP dry etching, and mixed oxide of SiO 2 & CeO 2 dielectric film with k value of about 12.3 was deposited by CVD. I-V characteristics of the diode with a field plate showed the breakdown voltage above 2000 V with an increased avalanche current. This means that the electric field reduces at the periphery of the mesa etched pn junction and was uniformly formed across the whole pn junction. It is clear that high-k dielectric film passivation and filed plate termination are essential techniques for GaN power devices.

show abstract

MOCVD of CeO2 and SiO2 Mixture Films Using Alkoxy Sources

Cited by 3 publications

References 2 publications

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

An Amidinato-Cerium Compound and Its Application as CVD Precursor for CeOx-Based Materials

Vertical GaN Diode with Field Plate Termination using High K Dielectrics

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