MOCVD of ZrO2 films from bis(t-butyl-3-oxo-butanoato)zirconium(IV): some theoretical (thermodynamic) and experimental aspects

Dhar, Shanta; Dharmaprakash, M. S.; Shivashankar, S. A.

doi:10.1007/s12034-008-0012-6

Cited by 13 publications

(6 citation statements)

References 19 publications

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“…The bands at 519 cm -1 and 792 cm -1 correspond to various vibrations of the Zr-O bond. Dhar [14] investigated ZrO 2 thin films deposited by MOCVD technique using beta ketoesterate complex and obtained similar type of microstructure.…”

Section: Resultsmentioning

confidence: 86%

Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)

Chinchamalatpure¹,

Chore²,

Patil³

et al. 2012

JMP

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The ZrO2 thin films deposited on Si (100) were successfully synthesized by solgel process and deposited by using spin-coating technique.The structural properties of ZrO2 thin films were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), and electrical properties were studied by conventional techniques like Capacitance-Voltage (C-V) measurement and Current–Voltage (I–V) measurement. The XRD of ZrO2 films shows the films crystallized and exists in two phases at 700℃ calcinations temperature. The C–V characteristics of all the dielectric films that involved distinct inversion, depletion, and accumulation were clearly revealed in MIS structure. I-V characteristics of ZrO2 thin films on Si shows decreased saturation current on calcinations temperatures. The XPS measurement reveals that a zirconium silicate interfacial layer has formed in the ZrO2/Si Systems

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Section: Resultsmentioning

confidence: 86%

Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)

Chinchamalatpure¹,

Chore²,

Patil³

et al. 2012

JMP

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“…The approach requires the identification of all the possible reactants and reaction products. The procedure for enumerating the gaseous species to be considered in the calculations, by consulting the mass spectrum of the precursor and employing 'chemical reasoning', is described in our earlier publications (Mukhopadhyay et al 2002a, b;Dhar et al 2008). For the CVD process with Fe(tbob) 3 as precursor, every possible solid product was considered for the analytical study.…”

Section: Analyticalmentioning

confidence: 99%

“…These are listed in table 1, along with the possible gaseous products. Calculations were performed, as described earlier (Mukhopadhyay et al 2002a, b;Dhar et al 2008), to obtain the concentrations of the various possible solid and gaseous products of the MOCVD process, as functions of substrate temperature (T sub ), total reactor pressure (P), and the ratio of the molar flow rates of oxygen and the vapour of the metalorganic precursor (O 2 /Pre). The corresponding phase stability diagrams were also constructed.…”

Section: Analyticalmentioning

confidence: 99%

Thermodynamic analysis of growth of iron oxide films by MOCVD using tris(t-butyl-3-oxo-butanoato)iron(III) as precursor

2008

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Thermodynamic calculations, using the criterion of minimization of total Gibbs free energy of the system, have been carried out for the metalorganic chemical vapour deposition (MOCVD) process involving the β-ketoesterate complex of iron [tris(t-butyl-3-oxo-butanoato)iron(III) or Fe(tbob) 3 ] and molecular oxygen. The calculations predict, under different CVD conditions such as temperature and pressure, the deposition of carbon-free pure Fe 3 O 4 , mixtures of different proportions of Fe 3 O 4 and Fe 2 O 3 , and pure Fe 2 O 3 . The regimes of these thermodynamic CVD parameters required for the deposition of these pure and mixed phases have been depicted in a 'CVD phase stability diagram'. In attempts at verification of the thermodynamic calculations, it has been found by XRD and SEM analysis that, under different conditions, MOCVD results in the deposition of films comprising pure and mixed phases of iron oxide, with no carbonaceous impurities. This is consistent with the calculations.Keywords. MOCVD; pure and mixed iron oxide films; CVD phase stability diagrams.

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“…Sarin (1995) has demonstrated that partial or complete coupling of modeling, based on fundamental principles related to equilibrium thermodynamics and process kinetics, and the corresponding experimentations, can be effectively used systematically to develop customized CVD coatings. Thermodynamic modeling has also been employed to analyse the MOCVD process for thin films of RuO 2 (Kang et al 2000), Cu (Mukhopadhyay et al 2002a, b), ZrO 2 (Baum and Larson 1993;Fredriksson and Forsgren 1995;Dhar et al 2008a) and iron oxides (Dhar et al 2008b). Such analysis computes the compositions of the thin films and the gaseous products as functions of parameters such as temperature, pressure, and partial pressure of various gases.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic modeling to analyse composition of carbonaceous coatings of MnO and other oxides of manganese grown by MOCVD

2011

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Equilibrium thermodynamic analysis has been applied to the low-pressure MOCVD process using manganese acetylacetonate as the precursor. "CVD phase stability diagrams" have been constructed separately for the processes carried out in argon and oxygen ambient, depicting the compositions of the resulting films as functions of CVD parameters. For the process conduced in argon ambient, the analysis predicts the simultaneous deposition of MnO and elemental carbon in 1:3 molar proportion, over a range of temperatures. The analysis predicts also that, if CVD is carried out in oxygen ambient, even a very low flow of oxygen leads to the complete absence of carbon in the film deposited oxygen, with greater oxygen flow resulting in the simultaneous deposition of two different manganese oxides under certain conditions. The results of thermodynamic modeling have been verified quantitatively for lowpressure CVD conducted in argon ambient. Indeed, the large excess of carbon in the deposit is found to constitute a MnO/C nanocomposite, the associated cauliflower-like morphology making it a promising candidate for electrode material in supercapacitors. CVD carried out in oxygen flow, under specific conditions, leads to the deposition of more than one manganese oxide, as expected from thermodynamic analysis (and forming an oxide-oxide nanocomposite). These results together demonstrate that thermodynamic analysis of the MOCVD process can be employed to synthesize thin films in a predictive manner, thus avoiding the inefficient trial-and-error method usually associated with MOCVD process development. The prospect of developing thin films of novel compositions and characteristics in a predictive manner, through the appropriate choice of CVD precursors and process conditions, emerges from the present work.

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MOCVD of ZrO2 films from bis(t-butyl-3-oxo-butanoato)zirconium(IV): some theoretical (thermodynamic) and experimental aspects

Cited by 13 publications

References 19 publications

Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)

Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)

Thermodynamic analysis of growth of iron oxide films by MOCVD using tris(t-butyl-3-oxo-butanoato)iron(III) as precursor

Thermodynamic modeling to analyse composition of carbonaceous coatings of MnO and other oxides of manganese grown by MOCVD

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