MOCVD Synthesis of Terbium Oxide Films and their Optical Properties

Abstract

Terbium oxide films are deposited on silicon substrates by metal-organic (MO)CVD from a vapor of Tb(thd) 3 in argon. Terbium sesquioxide (C-form) is realized in this process. Annealing of the films in air at 800°C, followed by cooling in air, leads to the formation of Tb 4 O 7 . The Ar ion-etching of the annealed films causes a reduction of Tb 4þ to Tb 3þ . Optical E g is estimated, photoluminescence spectra are investigated, and refractive indexes and dielectric constants are measured for terbium oxide films before and after annealing in air.

Determination of solubility limit of Sn4+in fluorite structured terbia with simultaneous evaluation of photocatalytic function

“…This is quite close to the values reported for thin films of terbium oxides. 35 A systematic increase in the band gap was observed with the progressive substitution of tin. Band gap values of 1.79, 1.98 and 2.05 eV were estimated for the 10%, 30% and 40% tin substituted terbia samples, respectively.…”

Influence of different annealing ambient on terbium oxide passivation layers sputtered using the RF sputtering on silicon substrate

“…in which R stands for diffuse reflectance, and where hv is multiplied by the F(R) function with the appropriate coefficient (n), where n was assumed to be 1/2 for the direct band gap (Eg) transition and 2 for the indirect band gap (Eg) transition. As a result, the value of n is assumed to be two (2) when applying equation (5), this is because the previous work indicates that terbium oxide has only a direct band gap [35]. Based on the obtained (F(R) x hv) 2 against energy (hv) plots as depicted in (Figure 14 NON were found to be 3.28, 3.17, 2.37, and 2.27 eV, respectively.…”

“…Terbium oxide passivation layers (Tb 4 O 7 ) are highly desirable for a wide spread of semiconductor applications, including chemical [29], optical [30], ceramic [31], and electronics [32], and so forth, owing to their excellent properties for instance a large bandgap (>2.23 eV) [33], hydrophobic nature [34], high-k (24 ± 2) [35], enhanced stability with Si substrate [36], low flat band voltage (0.007 V) [37], low lattice misfit (∼2%) [38], high refractive index [35] and strong luminescence [39]. Tb 4 O 7 is comprised of Tb +4 ions, which is ascribed to the remarkable steadiness of the formation of a half-filled 4f 7 subshell in the electronic configuration [40].…”

“…The metal-organic chemical vapor deposition (MOCVD) synthesis of terbium oxide (Tb 2 O 3 ) films. The films are then annealed in air ambient at a temperature of 800 °C, which leads to the formation of Tb 4 O 7 [35]. The kinetics of terbium oxide film growth from the decomposition of Tb(dpm) 3 vapor in argon flow at different temperatures [41].…”

A Novel Strong Cyan Luminescence Emission of Tb2O3 Particles

“…Besides, their functional properties are highly dependent upon crystallite size, composition, morphology, shape, size, precursor molarity, production method [4] [6] [7][1] [8]. Among them, terbium oxide (Tb 2 O 3 ) materials are used widely in many areas such as magnetooptical [9] [10] [11] [12], optical application [13] [1] [6] [14] [15] [16] [11] [17], magnetic application [3], electronic [7], optoelectronic devices [18], MRI contrast agents [19], electrochemical applications [6]. They can be synthesized by solvothermal [17], hydrothermal [20], precipitation [6] [7], template-assisted hydrothermal [1], self-propagating high-temperature [12] [9], thermal decomposition [3], sol-gel [21] [22], magnetron sputtering [15] and metal-organic (MO) CVD [14] methods.…”