Mode-Locked YDFL Using Topological Insulator Bismuth Selenide Nanosheets as the Saturable Absorber

Haris, Hazlihan; Batumalay, Malathy; Tan, Sin Jin; Markom, Arni Munira; Muhammad, Ahmad Razif; Harun, Sulaiman Wadi; Hasnan, Megat Muhammad Ikhsan Megat; Saad, Ismail

doi:10.3390/cryst12040489

Cited by 34 publications

(18 citation statements)

References 54 publications

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“…We can also observe that the Raman intensity of the 2D nanosheets is much higher than that of bulk Bi 2 Se 3 sheets. 21 Significant thickness dependence is a considerable broadening of the E g 2 mode. It is worth noting that the fwhm of the ultrathin 2D Bi 2 Se 3 nanosheets is 19 cm −1 , while in the case of bulk Bi 2 Se 3 sheets, it is 1.2 cm −1 .…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Tailoring Bi₂Se₃ Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation

Noureen,

Rehman,

Batool

et al. 2024

ACS Appl. Mater. Interfaces

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Layered semiconductors of the V−VI group have attracted considerable attention in optoelectronic applications owing to their atomically thin structures. They offer thickness-dependent optical and electronic properties, promising ultrafast response time, and high sensitivity. Compared to the bulk, 2D bismuth selenide (Bi 2 Se 3 ) is recently considered a highly promising material. In this study, 2D nanosheets are synthesized by prolonged sonication in two different solvents, such as N-methyl-2pyrrolidone (NMP) and chitosan-acetic acid solution (CS-HAc), using the liquid-phase exfoliation (LPE) method. X-ray diffraction confirms the amorphous nature of exfoliated 2D nanosheets with maximum peak intensity at the same position (015) crystal plane as that obtained in its bulk counterpart. SEM confirms the thin 2D nanosheet-like morphology. Successful exfoliation of Bi 2 Se 3 nanosheets up to five layers is achieved using CS-HAc solvent. The as-synthesized 2D nanosheets in different solvents are employed to fabricate the photodetector. At minimum selected power density, the photodetector fabricated using exfoliated ultrathin 2D nanosheets exhibits the highest range of responsivity, varying from 15 to 2.5 mA/W, and detectivity ranging from 2.83 × 10 9 to 6.37 × 10 7 . Ultrathin 2D Bi 2 Se 3 nanosheets have fast rise and fall times, ranging from 0.01 to 0.12 and 0.01 to 0.06 s, respectively, at different wavelengths. Ultrathin Bi 2 Se 3 nanosheets have improved photodetection parameters as compared to multilayered nanosheets due to the high surface to volume ratio, reduced recombination and trapping of charge carrier, improved carrier confinement, and faster carrier transport due to the thin layer.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Tailoring Bi₂Se₃ Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation

Noureen,

Rehman,

Batool

et al. 2024

ACS Appl. Mater. Interfaces

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“…In recent years, the works based on the Bi 2 Se 3 -SA laser − ,− have made people realize the strong potential of Bi 2 Se 3 in generating ultrashort pulses, but it has not developed too many technical advantages of its high transmittance, which makes it difficult for the ultrafast fiber laser based on a Bi 2 Se 3 thin film to achieve multiscene applications. In this work, the excellent optical transmission characteristics of Bi 2 Se 3 has been verified in the environment of a femtosecond fiber laser for the first time.…”

Section: Optical Transmission: the Key Factor To Increase The Damage ...mentioning

confidence: 99%

Preparation of High Damage Threshold Device Based on Bi₂Se₃ Film and Its Application in Fiber Lasers

et al. 2023

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As a handicap for passive mode-locked lasers to operate stably for a long time, the undesirable damage threshold of saturable absorption devices means that it is difficult to maintain a normal operation state under the irradiation brought by ultrashort pulses. To reduce the damage probability when the saturable absorption devices interact with an ultrafast laser, some technologies have been developed to resist the high-energy irradiation of an ultrafast laser that will also increase the difficulty of laser construction at the same time. In this paper we put forward a new research idea to improve the low-damage threshold problem: optimizing the optical transmittance, which will avoid dissociation due to excessive heat accumulation. Using the melt and machine exfoliation method, the high optical transmittance (>95%) saturable absorption devices based on Bi 2 Se 3 are prepared, whose damage threshold (2.45 mJ/cm 2 ) is nearly 5 times higher than commercial SESAM. The devices applied to generate femtosecond pulses exhibit exciting nonlinear optical effects, which enable the mode-locked fiber laser to operate with a pulse duration of 195 fs and a signal-to-noise ratio of 81.73 dB. This discovery not only proves that the passive mode-locked laser-based high transmittance Bi 2 Se 3 can obtain reliable pulse output, but also provides a new perspective for the selection of saturable absorption materials in the future.

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“…CQNLSE dark pulse is much easier to be generated with the assistance of novel materials regardless of the cavity's dispersion. Various emerging materials namely graphene [13,14], Transition Metal Dichalcogenides (TMD) [15,16], Topological Insulator (TI) [17,18], Black Phosphorus (BP) [19], MAX phase [20,21] and MXene [22,23] were reported to offer saturable absorption and high nonlinearity properties. So far, these materials are inserted into fiber laser cavity by the means of thin film [24] or coated on side polished fiber (SPF) [25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Optical modulation in Er-doped fiber laser delivering dark pulse utilizing side polished fiber coated with Ti₃AlC₂ as saturable absorber

Chang,

Tan,

Diblawe

et al. 2023

Mater. Res. Express

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Dark pulse mode-locked Erbium doped fiber laser (EDFL) was demonstrated in this work by employing side polished fiber (SPF) coated with Ti3AlC2 solution using drop casting method. The modulation depth of fabricated SPF coated with Ti3AlC2 solution was characterized at 2.2%. This SPF coated structure allowed the formation of dark mode-locked pulse with improved the birefringence and nonlinearity in EDFL. The dark pulse generated was cubic-quintic nonlinear Schrödinger equation (CQNLSE) dark pulse with center wavelength at 1558.935 nm, repetition rate 1.839 MHz and pulse width 170.2 ns. Pulse stability was investigated at 65.86 dB.

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Mode-Locked YDFL Using Topological Insulator Bismuth Selenide Nanosheets as the Saturable Absorber

Cited by 34 publications

References 54 publications

Tailoring Bi₂Se₃ Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation

Tailoring Bi₂Se₃ Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation

Preparation of High Damage Threshold Device Based on Bi₂Se₃ Film and Its Application in Fiber Lasers

Optical modulation in Er-doped fiber laser delivering dark pulse utilizing side polished fiber coated with Ti₃AlC₂ as saturable absorber

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Mode-Locked YDFL Using Topological Insulator Bismuth Selenide Nanosheets as the Saturable Absorber

Cited by 34 publications

References 54 publications

Tailoring Bi2Se3 Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation

Tailoring Bi2Se3 Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation

Preparation of High Damage Threshold Device Based on Bi2Se3 Film and Its Application in Fiber Lasers

Optical modulation in Er-doped fiber laser delivering dark pulse utilizing side polished fiber coated with Ti3AlC2 as saturable absorber

Contact Info

Product

Resources

About

Tailoring Bi₂Se₃ Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation

Tailoring Bi₂Se₃ Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation

Preparation of High Damage Threshold Device Based on Bi₂Se₃ Film and Its Application in Fiber Lasers

Optical modulation in Er-doped fiber laser delivering dark pulse utilizing side polished fiber coated with Ti₃AlC₂ as saturable absorber