Mode selection in InGaAs/InGaAsP quantum well photonic crystal lasers based on coupled double-heterostructure cavities

Wang, Lingfang; Cheng, Xinlai; Zhang, Xiaodong; Yu, Jiawang; Yan, Junyong; Ni, Zhong; Wang, Tao; Xia, Mingjun; Lin, Xing; Liu, Feng; Jin, Chao-Yuan

doi:10.1364/oe.447759

Cited by 5 publications

(2 citation statements)

References 42 publications

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“…FP mode cavities with thresholds at the kW level (excluding other effects such as gain medium) have been reported in most papers. [12,15,16] For mode 2 of 𝛼 cavity, the excitation light is incident at a certain angle. It is reflected at the array cell (law of reflection).…”

Section: Resultsmentioning

confidence: 99%

Threshold Reducing via Micro Rhombic Lasing Misalignment Step‐Cavity with a Simple and Universal Use

Pan,

Zhang,

Cao

et al. 2023

Advanced Optical Materials

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Nanolasers with low‐threshold operation have been attracting attention for a long time. However, research on methods to lower thresholds has been stagnant and underreported. To provide a generalizable method for reducing thresholds, a stepped array cavity designed in this study is demonstrated to reduce the nanolaser excitation threshold. In the experiment, the rhomboid array cavity is fabricated by 3D printing and covered with Cu film. The mechanism of two cavity (cavity α and β) and five modes is designed and displayed for systematically illustrating the parameters of the different cavities and principles of the different oscillation modes. The lasing behavior of modes 1, 2, 4, and 5 is proved by the photoluminescence spectrum at room temperature with the threshold of 1.53 kW cm−2, 2.73 kW cm−2, 66.2 W cm−2, and 371 W cm−2. The optimum angle of incidence for obtaining lower thresholds in the range 40°–60° is suggested. The laser generation mechanism and polarization characteristics are provided. Finally, the method developed in this study uses a wide range of materials and gain modes to achieve a universal threshold reduction method. The results indicate that the designed method is effective and scalable for a wide range of typical materials and gain modes.

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Section: Resultsmentioning

confidence: 99%

Threshold Reducing via Micro Rhombic Lasing Misalignment Step‐Cavity with a Simple and Universal Use

Pan,

Zhang,

Cao

et al. 2023

Advanced Optical Materials

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show abstract

“…Side-coupled variants function as compact Wavelength Division Multiplexing (WDM) channel drop filters, offering selective channel filtration while transmitting others [15]. Double heterostructure cavities [16,17], composed of three photonic crystal line defect waveguides with different lattice constants, achieve the highest reported Qfactors. By omitting a row in the bulk photonic crystal, a line defect waveguide forms, confining guided modes within the bandgap.…”

Section: Introductionmentioning

confidence: 99%

High Field Confinement Enhancement in Silicon-based Photonic Crystal with Different Point Defects

2024

IJFMR

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Two-dimensional silicon-based photonic crystals as optical analogs to electronic semiconductors are presented in this paper, emphasizing the design and analysis of two-dimensional structures. Employing the Lumerical FDTD solver, we initially crafted defect-free photonic crystals within a hexagonal lattice of air holes on a silicon slab (6.57 μm along x, 6.57 μm along y, 0.75 μm along z). The lattice parameters (a = 0.365 μm, r = 0.1095 μm, with r = 0.3a) established a target resonant wavelength of 1.5 μm. Utilizing Finite Difference Time-Domain (FDTD), we evaluated electric field decay, resonant modes, and the Q factor. The defect-free structure exhibited a peak Q factor of 736.004 at a resonant wavelength of 1262.87 nm. Removal of a central hole enhanced the Q factor to 1286.96 at 1391.07 nm. Introducing various line defects, the structure with three holes removed from vertical positions emerged as the optimal candidate for silicon-based photonic crystal cavity resonators, displaying the highest Q factor near the target resonant wavelength. Additionally, the structure with seven holes removed showed stable linear decays at both resonant wavelengths, suggesting its potential as a cavity resonator design candidate.

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Topologically Protected Single Edge Mode Lasing in Photonic Crystal Su–Schrieffer–Heeger Lattice with Directional Loss Control

Cheng,

Wang,

et al. 2024

Laser & Photonics Reviews

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Topological photonics is considered to be a robust and flexible platform for the design of nanophotonic devices against structural imperfections and performance degradation. Combining with parity‐time (PT) symmetry systems based on spatially distributed gain and loss, photonic crystal (PhC) lasers with micron‐size carrier reservoirs offer an ideal test bed for lasing mode competition and topological protection in nanophotonic structures. In this study, single topological edge mode (TEM) lasing is demonstrated in PhC lasers with a Su–Schrieffer–Heeger lattice comprised of coupled nanoresonators. By inducing directional loss control, a mode selection strategy is implemented, that achieves single TEM lasing with a side‐mode‐suppression ratio exceeding 30 dB. One of the TEMs exhibits remarkable robustness against local potential variation introduced by additional loss channels. This strategy integrating both topological protection and PT symmetry in nanophotonics would open up new prospects for the development of on‐chip single‐mode topological lasers unperturbed by output channels in nanophotonic integrated circuits.

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Mode selection in InGaAs/InGaAsP quantum well photonic crystal lasers based on coupled double-heterostructure cavities

Cited by 5 publications

References 42 publications

Threshold Reducing via Micro Rhombic Lasing Misalignment Step‐Cavity with a Simple and Universal Use

Threshold Reducing via Micro Rhombic Lasing Misalignment Step‐Cavity with a Simple and Universal Use

High Field Confinement Enhancement in Silicon-based Photonic Crystal with Different Point Defects

Topologically Protected Single Edge Mode Lasing in Photonic Crystal Su–Schrieffer–Heeger Lattice with Directional Loss Control

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