Mode structure of the L3 photonic crystal cavity

Chalcraft, A. R. A.; Lam, Sang; O’Brien, D.; Krauss, Thomas F.; Şahin, Mehmet; Szymanski, D.; Sanvitto, D.; Oulton, Ruth; Skolnick, M. S.; Fox, A. M.; Whittaker, D. M.; Liu, H.-Y.; Hopkinson, M.

doi:10.1063/1.2748310

Cited by 111 publications

(70 citation statements)

References 15 publications

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“…3(a), where / denotes the angle between the cavity y-axis and the polarization direction of the polarizer. These spectra indicate the two peaks at 655.4 nm and 656.9 nm are resonant modes of the L3 cavity with expected polarization and wavelength dependences given by three-dimensional finite difference time domain simulations, 13,14 which also confirm other resonant modes at longer wavelength. Therefore, over the and 08 (dotted line), which can be well fitted to a theoretical model considering the SE rate modifications and coupling efficiencies (dashed line).…”

supporting

confidence: 56%

Controlling the spontaneous emission rate of monolayer MoS₂ in a photonic crystal nanocavity

Gan¹,

Gao²,

Mak³

et al. 2013

Appl. Phys. Lett.

213

176

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We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS2) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) mapping shows strong variations of emission when the MoS2 monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate.Polarization dependences of the cavity-coupled MoS2 emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of MoS2 SE rate exceeding a factor of 70.The recent finding that a single atomic layer of transition metal dichalcogenides (TMDs) can exhibit a large, direct bandgap [1-4] opens the possibility of a new range of atomically thin materials for electronic and electro-optic devices.Monolayer molybdenum disulfide (MoS 2 ) has been used to fabricate field-effect transistors (FETs) with a carriermobility of 200 cm 2 V −1 s −1 and On/Off ratios exceeding 10 8 at room temperature, comparable to those obtained in graphene nanoribbon-based FETs [5]. Optical studies have shown that monolayer MoS 2 exhibits a photoluminescence (PL) quantum yield that is enhanced by a factor more than 10 4 compared with the bulk crystal [2,6]. However, the PL efficiency of monolayer MoS 2 is still very low at ∼ 10 −2 because the nonradiative recombination rate 1/τ nr far exceeds

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supporting

confidence: 56%

Controlling the spontaneous emission rate of monolayer MoS₂ in a photonic crystal nanocavity

Gan¹,

Gao²,

Mak³

et al. 2013

Appl. Phys. Lett.

213

176

View full text Add to dashboard Cite

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“…M1 is the fundamental cavity mode, and M2-M5 are the higher energy modes. 20 When increasing the air-hole diameter, the modes shift systematically over a range of ≈50 meV. In general, we did not observe a significant change of the Q factor over the tuning range.…”

Section: Sample Structure and Experimentsmentioning

confidence: 73%

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities

et al. 2011

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We present a comparative microphotoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The cavity-mode intensity is investigated for L3 and hexapole cavities with a range of different mode quality factors. For each type of cavity, many nominally identical samples are probed to obtain reliable statistics. As the cavity-mode quality factor increases, we observe a clear reduction of the average mode emission intensity under conditions of strong optical pumping. This clear trend is compared with simulations based on a dissipative master-equation approach that describes a cavity weakly coupled to an ensemble of emitters. We obtain direct evidence that reabsorption of photons in the cavity is responsible for the observed trend. When combined with the observation of cavity linewidth broadening in power-dependent measurements, we conclude that free carrier absorption limits the cavity-mediated light enhancement under conditions of strong excitation.

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“…Blue, red, and green curves show the PL at φ = 0°, 45°, and 90°, respectively. The two peaks of the MoS 2 -cavity PL agree to the expected resonant wavelengths, and the polarization dependence of the peaks corresponds well to that of the L3 cavity given by 3D FDTD simulations [33,34]. The SE rate of the MoS 2 in the cavity is proportional to the Purcell factor, which is a function of the cavity Q and the effective mode volume V mode .…”

Section: Fluorescence Enhancement Of 2d Materials In An Optical Cavitymentioning

confidence: 73%

Active 2D materials for on-chip nanophotonics and quantum optics

et al. 2017

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Two-dimensional materials have emerged as promising candidates to augment existing optical networks for metrology, sensing, and telecommunication, both in the classical and quantum mechanical regimes. Here, we review the development of several on-chip photonic components ranging from electro-optic modulators, photodetectors, bolometers, and light sources that are essential building blocks for a fully integrated nanophotonic and quantum photonic circuit.

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Mode structure of the L3 photonic crystal cavity

Cited by 111 publications

References 15 publications

Controlling the spontaneous emission rate of monolayer MoS₂ in a photonic crystal nanocavity

Controlling the spontaneous emission rate of monolayer MoS₂ in a photonic crystal nanocavity

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities

Active 2D materials for on-chip nanophotonics and quantum optics

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Mode structure of the L3 photonic crystal cavity

Cited by 111 publications

References 15 publications

Controlling the spontaneous emission rate of monolayer MoS2 in a photonic crystal nanocavity

Controlling the spontaneous emission rate of monolayer MoS2 in a photonic crystal nanocavity

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities

Active 2D materials for on-chip nanophotonics and quantum optics

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Product

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Controlling the spontaneous emission rate of monolayer MoS₂ in a photonic crystal nanocavity

Controlling the spontaneous emission rate of monolayer MoS₂ in a photonic crystal nanocavity