Model Comparison for $1/f$ Noise in Oscillators With and Without AM to PM Noise Conversion

Suh, Inwon; Roblin, Patrick

doi:10.1109/tmtt.2011.2170086

Cited by 3 publications

(7 citation statements)

References 26 publications

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“…Note that the obtained 1/ f additive phase noise analytic expression in ( 6) for the injection-locked oscillator becomes the 1/ f phase noise analytic expression Equation ( 14) in [18] when the injection-locking current source |I S | is neglected. Note also that the Ω 2 numerator and Ω 4 denominator terms in (6) can usually be neglected.…”

Section: /F Noisementioning

confidence: 89%

“…In this paper, an additive phase noise measurement system is used to (1) synchronize the oscillator using injection locking and (2) measure its additive phase noise. An analytic expression for the 1/ f additive phase noise of injection-locked negative-conductance oscillators is also derived using the generalized Kurokawa theory [17,18]. Note that the applicability of the behavioral Kurokawa theory to accurately model both low-and high-Q free-running oscillators in the presence and absence of AM-to-PM noise has been investigated in detail in [18].…”

Section: Introductionmentioning

confidence: 99%

“…An analytic expression for the 1/ f additive phase noise of injection-locked negative-conductance oscillators is also derived using the generalized Kurokawa theory [17,18]. Note that the applicability of the behavioral Kurokawa theory to accurately model both low-and high-Q free-running oscillators in the presence and absence of AM-to-PM noise has been investigated in detail in [18]. When injection locking is turned off, the analytic expression reported in this paper for the 1/ f additive phase noise in phase-locked oscillators is verified to reduce to the 1/ f phase noise analytic expression derived in [18] for the free-running oscillator.…”

Section: Introductionmentioning

confidence: 99%

“…Note that the applicability of the behavioral Kurokawa theory to accurately model both low-and high-Q free-running oscillators in the presence and absence of AM-to-PM noise has been investigated in detail in [18]. When injection locking is turned off, the analytic expression reported in this paper for the 1/ f additive phase noise in phase-locked oscillators is verified to reduce to the 1/ f phase noise analytic expression derived in [18] for the free-running oscillator. The new measurement and analysis techniques are then applied to two oscillators.…”

Section: Introductionmentioning

confidence: 99%

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1/f Additive Phase Noise Analysis for One-Port Injection-Locked Oscillators

Suh

Roblin

2023

Electronics

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The 1/f additive phase noise of one-port injection-locked oscillators is experimentally characterized and analyzed using a simple analytic model based on the generalized 1/f Kurokawa theory. To experimentally verify the prediction of the simple analytic model proposed, two negative-conductance transmission line pHEMT oscillators operating at 2.4828 GHz and 2.485 GHz were designed and fabricated. A new configuration for integrating an additive phase noise measurement system with a large signal network analyzer (LSNA) is introduced to jointly acquire both the noise and RF waveforms of the one-port injection-locked oscillator. The Kurokawa derivatives needed for the analytic expression were experimentally obtained using the LSNA measurements and optimized to accurately model the corner frequency. A good agreement between the predicted and experimental results was obtained for both the injection-locked and free-running oscillators. In contrast to phase noise measurements of the free-running oscillator, which can only characterize the oscillator-upconverted 1/f3 noise, the additive phase noise characterization of the injection-locked oscillator is shown to provide the means to directly observe and characterize the input-referred intrinsic 1/f noise source of the oscillator negative resistance.

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Section: /F Noisementioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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1/f Additive Phase Noise Analysis for One-Port Injection-Locked Oscillators

Suh

Roblin

2023

Electronics

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“…Note that 1/f noise is observed in additive phase noise measurements instead of Laurentzian noise in both passivated and unpassivated devices. This suggests that a distributed network of acceptor traps may actually be involved .…”

Section: Device Modeling Gan Hemtsmentioning

confidence: 99%

On the design of GaN Chireix power amplifiers using an embedding device model

Roblin

Chang

Martinez-Rodriguez

et al. 2016

Int J Numerical Modelling

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As wireless cellular communication keeps expanding toward higher bandwidth, multiband signals, and high frequencies of operation, the design of power efficient radio frequency power amplifiers (PAs) for cellular phone basestations is submitted to more stringent requirements. This paper discusses the promising technique of nonlinear embedding , which may help stream line the design of such PAs. To this order, the design of a GaN radio frequency PA from device modeling to circuit design is presented. The large signal modeling of GaN high-electron-mobility transistors including thermal and trapping memory effects is discussed first. The nonlinear embedding device model is then introduced using the concept of an anti-circuit transfer network. This embedding device model is then applied to the design of a Chireix amplifier. New Chireix design equations are developed to work with the memoryless inner core of the embedding device model, and their validity is confirmed in circuit simulations. The Chireix amplifier is then designed using the multi-harmonic impedance terminations predicted by the embedding device model for the package reference planes. Finally, the resulting Chireix amplifier is implemented in a circuit simulator with the original GaN high-electron-mobility transistors device model and verified in simulations to have a performance approaching that of the originally targeted Chireix at the current reference planes. These theoretical and simulation results demonstrate the potential of the nonlinear embedding PA design technique in the design of Chireix power amplifiers.

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A General Theory of Phase Noise in Transconductor-Based Harmonic Oscillators

Pepe

Andreani

2017

IEEE Trans. Circuits Syst. I

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Model Comparison for $1/f$ Noise in Oscillators With and Without AM to PM Noise Conversion

Cited by 3 publications

References 26 publications

1/f Additive Phase Noise Analysis for One-Port Injection-Locked Oscillators

1/f Additive Phase Noise Analysis for One-Port Injection-Locked Oscillators

On the design of GaN Chireix power amplifiers using an embedding device model

A General Theory of Phase Noise in Transconductor-Based Harmonic Oscillators

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