Model for a Quantum Hall Effect without Landau Levels: Condensed-Matter Realization of the "Parity Anomaly"

Haldane, F. D. M.

doi:10.1103/physrevlett.61.2015

Cited by 5,823 publications

(6,257 citation statements)

References 11 publications

Supporting

Mentioning

6,115

Contrasting

Unclassified

Order By: Relevance

“…Their dispersion relations are shown in Figure 3a-d. We notice the remarkable agreement between the DFT results and the TB result, Figure 2c, especially for LaReO 3 and LaOsO 3 . For SrRhO 3 , LaReO 3 and LaRuO 3 (not shown), the Fermi level crosses several bands.…”

Section: Resultssupporting

confidence: 75%

“…In both undoped systems, the Fermi level is inside the gap at the K point, and from the analogy to the TB result, these systems are TIs. The gap amplitude is found to be about 150 meV for LaAuO 3 and 40 meV for LaAgO 3 , so these systems should remain TIs at room temperature. The band gap and topological property can be controlled by breaking the symmetry between top and bottom layers.…”

Section: Resultsmentioning

confidence: 96%

“…To demonstrate the design principle for engineering TIs in TMO heterostructures, we consider perovskitetype TMOs as our prototype system. These compounds are very common and have the chemical formula ABO 3 , where O is oxygen and B is a transition-metal (TM) ion. The key idea is to start with a band structure that possesses 'Dirac points' in the Brillouin zone without the SOC, and then examine whether an energy gap can be opened at those points with the SOC turned on.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

et al. 2011

View full text Add to dashboard Cite

Topological insulators are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modelling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuo 3 bilayers have a topologically non-trivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in e g systems are also discussed.

show abstract

Section: Resultssupporting

confidence: 75%

Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

et al. 2011

View full text Add to dashboard Cite

show abstract

“…In the inserted graph, the center of the Brillouin zone is labeled , while two corners are labeled and separately. The dispersion near point () is linear and can be described by a Dirac-like Hamiltonian [54–56] …”

Section: The Structure Of Graphenementioning

confidence: 99%

Structure of graphene and its disorders: a review

Gao

Lee

et al. 2018

Science and Technology of Advanced Materials

531

187

View full text Add to dashboard Cite

Monolayer graphene exhibits extraordinary properties owing to the unique, regular arrangement of atoms in it. However, graphene is usually modified for specific applications, which introduces disorder. This article presents details of graphene structure, including sp2 hybridization, critical parameters of the unit cell, formation of σ and π bonds, electronic band structure, edge orientations, and the number and stacking order of graphene layers. We also discuss topics related to the creation and configuration of disorders in graphene, such as corrugations, topological defects, vacancies, adatoms and sp3-defects. The effects of these disorders on the electrical, thermal, chemical and mechanical properties of graphene are analyzed subsequently. Finally, we review previous work on the modulation of structural defects in graphene for specific applications.

show abstract

“…Solitons in polyacetylene are associated with the midgap states, which emerge owing to topological reason, and control the electric, magnetic and optical properties of the system [1][2][3] . One-dimensional (1D) conducting channels at the edge of the quantum Hall and quantum spin Hall systems are another example of bound states in clean systems, which determines the low-energy transport phenomena [4][5][6][7][8] . Bulk-edge correspondence guarantees the existence of these edge channels, that is, they are protected by the gap and the non-trivial topology of the bulk states 9,10 .…”

mentioning

confidence: 99%

Topological protection of bound states against the hybridization

2013

View full text Add to dashboard Cite

Topological invariants are conventionally known to be responsible for protection of extended states against disorder. A prominent example is the presence of topologically protected extended states in two-dimensional quantum Hall systems as well as on the surface of threedimensional topological insulators. Here we introduce a new concept that is distinct from such cases-the topological protection of bound states against hybridization. This situation is shown to be realizable in a two-dimensional quantum Hall insulator put on a three-dimensional trivial insulator. In such a configuration, there exist topologically protected bound states, localized along the normal direction of two-dimensional plane, in spite of hybridization with the continuum of extended states. The one-dimensional edge states are also localized along the same direction as long as their energies are within the band gap. This finding demonstrates the dual role of topological invariants, as they can also protect bound states against hybridization in a continuum.

show abstract

Model for a Quantum Hall Effect without Landau Levels: Condensed-Matter Realization of the "Parity Anomaly"

Cited by 5,823 publications

References 11 publications

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

Structure of graphene and its disorders: a review

Topological protection of bound states against the hybridization

Contact Info

Product

Resources

About