Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates

Eriguchi, Koji; Nakakubo, Yoshinori; Matsuda, Asahiko; Takao, Yoshinori; Ono, Ken

doi:10.1143/jjap.49.056203

Cited by 45 publications

(85 citation statements)

References 73 publications

(158 reference statements)

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“…One of the typical PPD is Si loss in the source and drain extension region, called "Si recess" [1,2] that is observed in planar MOSFETs. Recently, several models [2,3]-damage layer creation, recess structure formation, and MOSFET degradation-have been proposed, where analytical predictions are available, and some of the models have been verified from experiments. This PPD not only degrades the MOSFET performance [2,4] but also enhances the parameter variations [5] in an LSI.…”

Section: Introductionmentioning

confidence: 99%

Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency

Matsuda

Nakakubo

Takao

et al. 2013

Proceedings of 2013 International Conference on IC Design &Amp; Technology (ICICDT)

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Plasma-induced defect generation process in crystalline Si structure was simulated by classical molecular dynamics simulations. Energy distribution functions of Ar and Cl ions incident on the Si surface (IEDF) were implemented to predict the impacts on the defect generation processes in presentday plasma process equipments. The damaged-layer thickness was confirmed to be a weak function of IEDF, which are consistent with a binary-collision-based range model and experimental results. In the case of "fin-gate structure", the simulation results predict that the sidewall may be damaged not by the incident angular distribution of ions but by the straggling of high-energy ions near the reaction surface, which leads to an on-current degradation of FinFETs.

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Section: Introductionmentioning

confidence: 99%

Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency

Matsuda

Nakakubo

Takao

et al. 2013

Proceedings of 2013 International Conference on IC Design &Amp; Technology (ICICDT)

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“…Plasma exposure creates the defects in the surface region of the SiN film. The depth profile of the created defects is usually modeled on the basis of the PPD range theory 33) and confirmed experimentally in many research reports. 15,26) With regard to the energy profile of the defects in the SiN energy band, a first-principles calculation 34) predicted that the density of state is created close to the bottom of the conduction band (E c ) in the case of Ar plasma exposure.…”

Section: Electrical Measurementsmentioning

confidence: 92%

Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

Kuyama

Eriguchi

2018

Jpn. J. Appl. Phys.

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We proposed evaluation methods of plasma-induced damage (PID) in silicon nitride (SiN) films. The formation of an oxide layer by air exposure was identified for damaged SiN films by X-ray photoelectron spectroscopy (XPS). Bruggeman's effective medium approximation was employed for an optical model consisting of damaged and undamaged layers, which is applicable to an in-line monitoring by spectroscopic ellipsometry (SE). The optical thickness of the damaged layer -an oxidized layer -extended after plasma exposure, which was consistent with the results obtained by a diluted hydrofluoric acid (DHF) wet etching. The change in the conduction band edge of the damaged SiN films was presumed from two electrical techniques, i.e., current-voltage (I-V) measurement and time-dependent dielectric breakdown (TDDB) test with a constant voltage stress. The proposed techniques can be used for assigning the plasma-induced structural change in an SiN film widely used as an etch-protecting layer.

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“…The thickness of the damaged layer showed a power-law dependence on the average ion energyĒ ion . [18][19][20] Since the thickness of the damaged layer may be equivalent to the Si recess depth (d R ), d R is considered to be governed significantly byĒ ion . Thus, controlling thē E ion is the principal approach for suppressing the PPD.…”

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“…15,17 This damage creation mechanism was clarified using the modified range theory. 18 Eriguchi et al recently modeled 18 z E-mail: eriguchi@kuaero.kyoto-u.ac.jp the dependence of the surface damaged-layer thickness on the incident average ion energyĒ ion and rf-bias frequency applied to a wafer stage. The thickness of the damaged layer showed a power-law dependence on the average ion energyĒ ion .…”

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Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate

Nakakubo

Eriguchi

Ono

2015

ECS J. Solid State Sci. Technol.

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Characterization of plasma-induced Si substrate damage is demonstrated using an electrical capacitance-voltage (C-V) technique customized for the nano-scale analysis. Low resistive Si wafers are exposed to an inductively coupled plasma (ICP) or a capacitively coupled plasma (CCP). We focus on the effects of plasma parameters and wet-etching processes on plasma-induced physical damage (PPD) analyses. The optical thicknesses of surface and interfacial layers (d SL and d IL ) were characterized using spectroscopic ellipsometry (SE) and compared with the electrical oxide thicknesses (EOT) obtained by the C-V technique. In the case of asdamaged samples, the optical thickness d SL by SE is found to be smaller than the EOT by the C-V technique, while the sum of d SL and d IL was approximately equal to the EOT. A diluted hydrofluoric acid (DHF) wet-etch step is employed to address depth profile of defect density in damaged samples. We identify the latent defect density, d SL , and d IL after the DHF wet-etch, which are indispensible for practical device performance designs. It is found that, although the average energy of incident ions (Ē ion ) is larger for the case of CCP, the latent defect density of CCP-damaged samples is smaller than that of ICP even after the wet-etching. This finding is in sharp contrast to previous pictures-the largerĒ ion leads to the thicker damaged layer and the larger latent defect density. We propose a model for these conflicting results, where the profiles of defect density and the sensitivities of each analysis technique are taken into account. The present work highlights the importance of the nano-scale damage characterization using the C-V technique, allowing to understand the influence of latent defects and to enable better design of future electronic devices. Plasma processing plays an important role in manufacturing present-day microelectronics. Over the last two decades, plasma process-induced damage (PID) has been one of the crucial problems in fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) 1-3 in LSI (Large Scale Integration) circuits. PID consists of four major mechanisms.2 The first mechanism is damage induced by conduction current from plasma flowing into MOSFETs, resulting in degradation of the performance and increase in the parameter variability owing to plasma-induced electrical stress. 1,4,5 This electrical interaction has been discussed and is called plasma-induced charging damage.2 The second mechanism is damage induced by incident photons on material surface. Photons with high energy can interact with materials such as photoresist masks and low-k dielectrics, leading to bond breaking in the materials exposed to plasma, or in some cases, create an interface state between SiO 2 and Si substrate.6-8 The third mechanism is surface and bulk chemical reaction with fast diffusion reactions causing material modification such as surface defects and roughness. The fourth mechanism is damage induced by high-energy ion bombardment on Si substrates or oth...

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Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates

Cited by 45 publications

References 73 publications

Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency

Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency

Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate

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