Model for calculating the refractive index of a III–V semiconductor

Anani, M.; Mathieu, C.; Lebid, Sara; Amar, Youcef; Chama, Zouaouia; Abid, Hamza

doi:10.1016/j.commatsci.2007.05.023

Cited by 150 publications

(51 citation statements)

References 10 publications

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“…Anani et al [16] reported that, the refractive index of a semiconductor is totally dependent on its bandgap, and they have proposed a linear relation between the refractive-index and the band gap energy E g , it is given by the following formula:…”

Section: Refractive Index Plasmon Energy Force Constants and Latticmentioning

confidence: 99%

“…The relevant values of the different constants K 10 , K 11 , K 12 , K 13 , K 14 , K 15 , K 16 (13), (14), (15), (16) and the value (16.765eV) of the plasmon energy are respectively: 4.890eV, 3.799eV, 0.392 and 9.275. Recently, Verma et al [22] proposed a simple linear relation between the inverse of the high-frequency and static dielectric constants and the product of ionic charges (ZaZc) of the anion and the cation and the average atomic number (Zav) of constituent atoms of A II -B VI and A III -B V semiconductor groups, it is given by the following formula:…”

Section: Homopolar and Heteropolar Energies Dielectric Constant And mentioning

confidence: 99%

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Optoelectronic and thermal properties of boron-bismuth compound

Daoud¹,

Bioud²,

Labgaa³

et al. 2014

International Journal of Physical Research

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In the present work, we report first principles calculations of the near-neighbor distance (bond length) and the average energy gap using the pseudopotential plane wave method, in the framework of the density functional theory (DFT) within the local density approximation (LDA) and the Hartwigzen-Goedecker-Hutter (HGH) scheme for the pseudopotential of Boron-Bismuth compound in its structure zincblende phase. The refractive index, the plasmon energy, the force constants, the lattice energy, the homopolar and heteropolar energies, the ionicity, the linear optical susceptibility, the hardness, the dielectric constants, the Debye temperature and the melting temperature are then predicted by mean of some simple emperical formulas. The results obtained are analyzed and compared with the available theoretical data of the literature

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Section: Refractive Index Plasmon Energy Force Constants and Latticmentioning

confidence: 99%

Section: Homopolar and Heteropolar Energies Dielectric Constant And mentioning

confidence: 99%

Optoelectronic and thermal properties of boron-bismuth compound

Daoud¹,

Bioud²,

Labgaa³

et al. 2014

International Journal of Physical Research

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“…Anani et al [11] reported that the refractive index (n) of a semiconductor is dependent on its optical energy gap (Eg). They proposed a linear relationship between the index of refraction and the energy gap; it is given by the following expression [11]:…”

Section: Optical Propertiesmentioning

confidence: 99%

Correlation study of optical, mechanical and thermal properties of BAs material and its experimental energy gap

Daoud

2017

IJPR

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The object of this work is to study the correction between the optical, mechanical and thermal properties of boron arsenide (BAs) material and its experimental optical energy gap. The index of refraction, the high-frequency dielectric constant, the optical electronegativity, the bulk modulus, the micro-hardness, the plasmon energy, the Debye temperature, the melting temperature and the electronic polarizability of BAs were estimated from its energy gap. The results obtained are analyzed in comparison with available experimental and other theoretical data. My obtained results of the reflective index and the dielectric constant agree well with other theoretical data; whereas the bulk modulus, the microhardness, the Debye temperature, and the melting temperature are slightly lower than the experimental and other theoretical data. The electronic polarizability is slightly different than other theoretical ones from the literature.

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“…In the case of direct transition type semiconductors, the top of the valence band and the bottom of the conduction band are at the same energy axis (direction) and the refractive index of these semiconductor materials are typically decrease with increasing of the band gap energy Eg. Anani et al [12] reported that, the refractive index of a semiconductor is dependent on its band gap, and they have proposed a linear relationship between the refractive-index and the band gap energy Eg, it is given by the following formula:…”

Section: Micro-hardness Plasmon Energy Force Constants and Ionicitymentioning

confidence: 99%

Semi-empirical prediction of physical properties of (B3) TlP compound

Daoud¹,

Bioud²

2014

International Journal of Physical Research

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The principal goal of this work is the prediction only by means of some emperical formulas and two other physical quantities (the bond length and the bulk modulus calculated initially from first-principle calculations) of the refractive index, the exciton Bohr parameter, the electronic polarizability, the plasmon energy, the force constants, the optical band gap energy, the homopolar and heteropolar energies, the bonding-antibonding energy gap, the ionicity, the dielectric constant, and the optical susceptibility of (B3) thallium phosphide (TlP) compound. In addition, the Debye temperature, the melting temperature, the thermal conductivity and finally the linear thermal expansion of this compound are also obtained. Our results are in general in good agreement with the previous results of the literature.

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Model for calculating the refractive index of a III–V semiconductor

Cited by 150 publications

References 10 publications

Optoelectronic and thermal properties of boron-bismuth compound

Optoelectronic and thermal properties of boron-bismuth compound

Correlation study of optical, mechanical and thermal properties of BAs material and its experimental energy gap

Semi-empirical prediction of physical properties of (B3) TlP compound

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