Model forCdefect on Si(100):  The dissociative adsorption of a single water molecule on two adjacent dimers

Role of surface defects in room-temperature growth of metals on Si(100)2 × 1

“…It should be noted that during deposition the number of the stable chain terminations increased. This could be explained by increasing number of C-type defects during the deposition in agreement with the interpretation of these defects as contaminants from residual gas [3,4]. Detail of Ag chain decay is shown in Fig.…”

“…Contrary to A and Btype defects, consensus on C-type defect structure is quite unsettled. Recently, two groups proposed independently the origin of C-type defect in a dissociated H 2 O molecule adsorbed on two adjacent Si dimers [3,4]. It has been proposed that the C-type defect changes significantly the reactivity of two remaining unreacted Si atoms with free dangling bonds (one per each Si dimer).…”

SPM Characterization of Titanium Disilicide Nanostructures Grown on a Ni-Modified Si(100) Substrate

“…Both of them show a semiconducting character in local I-V characteristics [5,7]. Adsorption of dissociated water molecules results in so-called C-type defects [11,12]. These defects are seen as single or double Si atom vacancies in neighboring dimers in STM images.…”

Dynamics of the C–O stretch vibration on Si(100)

“…In the meantime, the first adsorption site has been confirmed by STM. In addition, it was discovered that CO adsorbs in islands around defect sites of type C [17], which have been identified as being caused by dissociative adsorption of water on two atoms of adjacent Si dimers [18].…”