Model for nonequilibrium segregation during pulsed laser annealing

Wood, R. F.

doi:10.1063/1.91914

Cited by 98 publications

(21 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…c L ) in Eq. (7). In the CG model the partition coe cient k depends on the interface velocity through an expression of the form (12) in the dilute solution limit.…”

Section: Expressions For the Partition Coe Cientmentioning

confidence: 99%

“…The matching of solutions at the solid-liquid interface is obtained (a) from the ux conditions required for conservation and (b) through constitutive laws for the interface temperature and the jump in concentration across the interface as functions of velocity. The latter are obtained from separately-derived models of the solute di usion across the atomic layers associated with the interface; see, for example, the continuous growth (CG) model of Aziz and coworkers 1, 2, 3] as well as others 4,5,6,7,8,9]. The velocity dependence of the jump in concentration is termed solute trapping and provides a mechanism whereby the jump vanishes at high rates of solidi cation in a manner consistent with experimental observations (partitionless solidi cation).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Solute trapping and solute drag in a phase-field model of rapid solidification

et al. 1998

View full text Add to dashboard Cite

During rapid solidification, solute may be incorporated into the solid phase at a concentration significantly different from that predicted by equilibrium thermodynamics. This process, known as solute trapping, leads to a progressive reduction in the concentration change across the interface as the solidification rate increases. Theoretical treatments of rapid solidification using traditional sharp-interface descriptions require the introduction of separately derived nonequilibrium models for the behavior of the interfacial temperature and solute concentrations. In contrast, phase-field models employ a diffuse-interface description and eliminate the need to specify interfacial conditions separately. While at low solidification rates equilibrium behavior is recovered, at high solidification rates nonequilibrium effects naturally emerge from these models. In particular, in a previous study we proposed a phase-field model of a binary alloy ͓A. A. Wheeler et al., Phys. Rev. E 47, 1893 ͑1993͔͒ in which we demonstrated solute trapping. Here we show that solute trapping is also possible in a simpler diffuse interface model. We show that solute trapping occurs when the solute diffusion length D I /V is comparable to the diffuse interface thickness. Here V is the interface velocity and D I characterizes the solute diffusivity in the interfacial region. We characterize the dependence of the critical speed for solute trapping on the equilibrium partition coefficient k E that shows good agreement with experiments by Aziz and co-workers ͓see M. J. Aziz, Metall. Mater. Trans. A 27, 671 ͑1996͔͒. We also show that in the phase-field model, there is a dissipation of energy in the interface region resulting in a solute drag, which we quantify by determining the relationship between the interface temperature and velocity.

show abstract

“…c L ) in Eq. (7). In the CG model the partition coe cient k depends on the interface velocity through an expression of the form (12) in the dilute solution limit.…”

Section: Expressions For the Partition Coe Cientmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Solute trapping and solute drag in a phase-field model of rapid solidification

et al. 1998

View full text Add to dashboard Cite

show abstract

“…The kinetic analysis of the interface motion in a two-component system is a difficult problem that has been treated from various perspectives by a number of authors (Cahn et al, 1980;Jackson et al, 1980;Wood, 1980;Hillert and Sundman, 1977;Turnbull, 1980). An instructive review and critique of the various analyses was presented by Cahn et al (1980).…”

Section: B Kinetic Analysismentioning

confidence: 99%

Crystallization Processes

Spaepen¹,

Turnbull²

1982

Laser Annealing of Semiconductors

View full text Add to dashboard Cite

“…Shortly after the reports of non-equilibrium incorporation of dopants into silicon after laser melting [1][2][3][4], several models were proposed to describe ''solute trapping'' [5][6][7][8]. The most extensive comparisons with experiment [9][10][11][12] have been made using the Aziz model [7].…”

Section: Introductionmentioning

confidence: 99%