Stress development during the electrodeposition of copper from additive-free, acidic CuSO 4 electrolyte was analyzed by dynamic stress analysis, an in situ characterization technique that combines electrochemical impedance spectroscopy with cantilever curvature. Two sources of stress account for the dynamic stress behavior in the frequency range of 0.1 Hz to 25 Hz. The high frequency region is controlled by electrocapillarity (charge-induced stress). The stress is 180 • out of phase with the input potential, and its amplitude is relatively small. Low frequency is dominated by the growth stress of the Cu film, which under the conditions examined here is tensile. The amplitude of the stress response increases with decreasing frequency and its phase angle shifts from +180 • to +90 • . Both of these transitions are potential dependent and can be simulated from the electrochemical impedance, making use of separate stress-charge coefficients for double layer charging and Cu deposition. Since these stress-generating mechanisms have dramatically different frequency dependency, Cu deposition is a nice demonstration that highlights the attributes of DSA; i.e., using frequency to separate the various stress contributions. Electrodeposition is commonly used in electronic packaging, magnetic recording, copper interconnections in printed circuit boards and integrated circuits, and MEMS (micro-electromechanical systems) devices. These films tend to develop sizable residual stresses as a result of the nucleation and growth process that can adversely affect reliability and service life. Various mechanisms have been proposed to account for the stress evolution that has been observed experimentally in both electrodeposited films and those grown from the gas phase. These stress-generating processes sometimes occur sequentially as the film morphology develops. More often, stress development is a balance between competing mechanisms.Multiple studies appear in the literature that address stress evolution during Volmer-Weber or 3D island growth of polycrystalline films.1-4 Generally, films show three stages of stress evolution during growth. Compressive stress is often observed in the pre-coalescence regime where the deposit is comprised of discrete nuclei on the surface. This compressive stress has been attributed to Laplace pressure at the surface, 5,6 surface stress, 7 and the presence of adatoms and surface defects.8 When these nuclei coalesce into a continuous film, tensile stress rapidly develops. Several quantitative models have been suggested for the tensile stress generation during coalescence, but the basic premise of these models is the same.9-17 The surface energy of the islands is larger than the free energy of a grain boundary; therefore, the system energy can be reduced if the individual nuclei coalesce into a continuous film. The reduction of surface energy is balanced by an increase of elastic strain energy which gives rise to tensile stress in the film. As the coalesced film thickens, the stress reaches a steadystate ...