Model for surfactant-mediated growth of Ge on Pb-covered Si(111) surfaces

Bȩben, J.; Hwang, Ing−Shouh; Chang, Tien-Chih; Tsong, Tien T.

doi:10.1103/physrevb.63.033304

Cited by 9 publications

(9 citation statements)

References 32 publications

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“…1͑a͒ transition in island shape due to deposition flux which was not presented in our previous paper. 30 Experimental results are qualitatively similar, though the increase of island density is faster ͓see Fig. 3͑b͒ of Ref.…”

Section: Model Summarymentioning

confidence: 54%

“…No such data have ap-parently been obtained as yet, and at present the time evolution is best probed in simulations. Here we extend our previous study 30 to the analysis of the time evolution of island size distributions and their scaling properties.…”

Section: Introductionmentioning

confidence: 58%

“…The kinetic Monte Carlo method 31,32 used in our previous 30 and present studies makes the assumption of Markovian dynamics throughout. The assumption holds because of the high values of the ratio ⌬E/kT we use in our simulations.…”

Section: Model Summarymentioning

confidence: 99%

“…These features are interrelated: For example, a mechanism proposed to explain the temperature-dependence of the island shape has also to yield an almost temperature-independent threshold coverage for nucleation. In our previous paper 30 we proposed a model of SME which does have this property. Experimental study of the time evolution is rather difficult.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of island morphology in a model for Pb-mediated growth of Ge on Si(111)

2001

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Analysis of island morphology in a realistic model of surfactant-mediated epitaxial growth is presented and compared with experimental results obtained for Pb-mediated growth of Ge on Si͑111͒. In kinetic Monte Carlo simulations it is found that the clustering of Ge atoms above the surfactant obeys an anomalous scaling, and that the cluster size distribution is self-similar in time, up to the latest stages of coarsening, where Ostwald ripening predominates. The clustering process is limited in time due to the irreversible exchange of Ge atoms with surfactant. Further growth of islands below surfactant leads to their ramification. Islands which do not significantly grow below surfactant are compact, and are characterized by a size distribution whose shape is similar to that obtained within the cluster diffusion model of crystal growth.

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Section: Model Summarymentioning

confidence: 54%

Section: Introductionmentioning

confidence: 58%

Section: Model Summarymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Analysis of island morphology in a model for Pb-mediated growth of Ge on Si(111)

2001

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“…Some studies suggest that the deposited atoms might be exchanged with the surfactant atoms soon after deposition, and thus their surface mobility is significantly reduced, resulting in a high island density compared to the case without the surfactant layer [3,4,5,6,15]. There are also other studies that demonstrate that the surface mobility of deposited atoms is significantly enhanced [17,[21][22][23]. It is suggested that the surfactant atoms passivate the substrate surface dangling bonds; thus, the deposited atoms can move on the surfactant layer with small energy barriers [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Adsorption and dynamics of Si atoms at the monolayer Pb/Si(111) surface

et al. 2017

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In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125-230 K using a variable-temperature scanning tunneling microscope (STM). The Pbcovered Si(111) surface form a low-symmetry row-like ( 3 7 × ) structure in this temperature range and the Si atoms bind favorably to two specific on-top sites (T1A and T1B) on the trimer row after deposition at the sample temperature of ~125 K. The Si atoms were immobile at low temperatures and started to switch between the two neighboring T1Aand T1B sites within the same trimer when the temperature was raised to ~150 K. When the temperature was raised above ~160 K, the adsorbed Si atoms could hop to other trimers along the same trimer row. Below ~170 K, short hops to adjacent trimers dominated, but long hops dominated at temperatures above ~170 K. The activation energy and prefactor for the Si atoms diffusion were derived through analysis of continuous-time imaging at temperatures from 160-174 K. In addition, irreversible aggregation of single Si atoms intoSi clusters started to occur at the phase boundaries or defective sites at temperatures above 2 ~170 K. This study provides crucial information for understanding the very initial stage of nucleation and growth behavior of epitaxial Si layers on a Pb-covered Si(111) surface. In addition, our study provides strong evidence for breaking in the mirror symmetry in the ( 3 7 × )-Pb structure, which has implication for the atomic model of this controversial structure.

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