2010
DOI: 10.1103/physrevb.82.045122
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Model Hamiltonian for topological insulators

Abstract: In this paper we give the full microscopic derivation of the model Hamiltonian for the three dimensional topological insulators in the Bi2Se3 family of materials (Bi2Se3, Bi2T e3 and Sb2T e3). We first give a physical picture to understand the electronic structure by analyzing atomic orbitals and applying symmetry principles. Subsequently, we give the full microscopic derivation of the model Hamiltonian introduced by Zhang et al [1] based both on symmetry principles and the k · p perturbation theory. Two diffe… Show more

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Cited by 932 publications
(1,273 citation statements)
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References 42 publications
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“…Minimal number of Weyl fermions can be achieved in magnetically doped Bi 2 Se 3 and TlBiSe 2 family of materials, in which ferromagnetism has also been realized [29][30][31] . Here we adopt the four band model 32,33 with general mass terms, to describe these materials,…”
Section: Microscopic Modelmentioning
confidence: 99%
“…Minimal number of Weyl fermions can be achieved in magnetically doped Bi 2 Se 3 and TlBiSe 2 family of materials, in which ferromagnetism has also been realized [29][30][31] . Here we adopt the four band model 32,33 with general mass terms, to describe these materials,…”
Section: Microscopic Modelmentioning
confidence: 99%
“…The effective model 8,29 describing the massless 2D Dirac fermion of a topological p-n junction reads…”
Section: Model and Resultsmentioning
confidence: 99%
“…Our algorithm, combined with accurate tight binding models that can be developed for any material via either first principles calculations or by simple empirical means, 57 can provide accurate quantitative simulations of the real experimental samples. We want to point out that, recently, the twisted boundary conditions were successfully used to compute the Chern invariant of an interacting 2-dimensional fractional Chern insulator.…”
Section: Discussionmentioning
confidence: 99%