Model of Anisotropic Electrical Resistivity in Rough Thin Films

Abstract

In this work a new model of electrical resistivity is proposed in order to study the relationship between surface roughness geometry and thin films resistivity. The model is based on the numerical dynamic averaging of electron mean free path over whole simulated structure of rough film. For current-in-plane configuration the resistivity increases with decreasing film thickness faster than for current-perpendicular-to-plane one. Our simulations showed that big roughness depth and fine in-plane spatial period of roughness are crucial factors increasing the resistivity of ultrathin metallic layers.

Magnetic and magnetoresistance of BiFe0.5Cr0.5O3 thin film over Pt(111) substrate at various thicknesses by sol‐gel method

“…Considering that, the electrical and magnetic properties are strongly influenced from the film thickness (grain size). We expect that in our case, magnetic properties will get more sensitive to film thickness . The relation between film thickness, roughness, and the grain size was tabulated below in Table for the further reference.…”

“…We expect that in our case, magnetic properties will get more sensitive to film thickness. 15 The relation between film thickness, roughness, and the grain size was tabulated below in Table 1 for the further reference.…”