Model of metallic filament formation and rupture in NiO for unipolar switching

Lee, Hyung Dong; Magyari-Köpe, Blanka; Nishi, Yoshio

doi:10.1103/physrevb.81.193202

Cited by 109 publications

(92 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2(b) and 2(c) may correspond to one filament formed beneath, through a localized phase change process under the electrical field. The conducting nanofilaments could come from oxygen deficient Magnéli phases, 17 or metallic atoms chains 18 formed in the bulk oxide. The large distinction between the two states under different biases could be explained by the electro-migration of oxygen ions.…”

Section: Author(s) All Article Content Except Where Otherwise Notedmentioning

confidence: 99%

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

Du¹,

Kumar²,

Pan³

et al. 2013

AIP Advances

View full text Add to dashboard Cite

The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon

show abstract

Section: Author(s) All Article Content Except Where Otherwise Notedmentioning

confidence: 99%

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

Du¹,

Kumar²,

Pan³

et al. 2013

AIP Advances

View full text Add to dashboard Cite

show abstract

“…12,13 It has been proposed that restoration of the original insulating properties after oxide DB is due to the melting of the metallic filament by Joule heating 14 or to annihilation of oxygen vacancies formed during DB. 15 A similar phenomenon was recently reported for Al/Al 2 O 3 diodes and named "unforming," 16 but details were not presented.…”

mentioning

confidence: 55%

Reversible post-breakdown conduction in aluminum oxide-polymer capacitors

Chen

Gomes

Rocha

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

Aluminum/Al2O3/polymer/metal capacitors submitted to a low-power constant current stress undergo dielectric breakdown. The post-breakdown conduction is metastable, and over time the capacitors recover their original insulating properties. The decay of the conduction with time follows a power law (1/t)α. The magnitude of the exponent α can be raised by application of an electric field and lowered to practically zero by optical excitation of the polyspirofluorene polymer. The metastable conduction is attributed to formation of metastable pairs of oppositely charged defects across the oxide-polymer interface, and the self-healing is related to resistive switching.

show abstract

“…4,8,[19][20][21] In this section, the oxygen content of the bridge that appeared during forming will be discussed. Figure 3(a) shows a TEM image of the bridge region of the sample shown in Fig.…”

Section: B Oxygen Content Of Bridgementioning

confidence: 99%

“…[10][11][12][13][14][15][16] Recent works reported that the "filamentredox-model" (in short, the "filament model") is influential in unipolar resistance switching. 4,[17][18][19][20][21] In the first process of this ReRAM operation, a relatively high voltage applied to the initial ReRAM film in the high resistance state (HRS, off-state) changes it to the low resistance state (LRS, onstate). This initializing operation is called "forming" and is carried out based on a current limitation (in other words, current compliance) to prevent permanent destruction of the device.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

Fujii

Arita

Hamada

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

We used thermal oxidization at various temperatures to prepare NiO/Pr-Ir for use in resistance random access memory (ReRAM) samples. In-situ transmission electron microscopy (TEM) was used to investigate the forming process of these ReRAM samples, where a needle-shaped top electrode of Pt-Ir was attached to the NiO/Pt-Ir ReRAM layer. The forming voltage initializing the NiO layer increased at an oxidization temperature of between 200 and 400 C. In this process, conductive bridges, which are thought to be conductive filaments of a ReRAM, appeared, and their sizes showed a correlation with the injection power. It was as small as about 300 nm 2 when the injection power was 10 À6 W. Energy dispersive X-ray spectroscopy was used to analyze the bridge, and it was experimentally confirmed that the oxygen content of the bridge was lower than that of the initial NiO layer. However, these bridges in the low resistance state did not show further ReRAM switching to the high resistance state inside of a TEM instrument. To check the reason of this result, we investigated samples outside of the TEM instrument, which had similar geometry to that of TEM specimens. They showed the ReRAM switching in air ambient but not in vacuum. Combining these results inside and outside of the TEM instrument, it can be concluded that the existence of oxygen around the conductive filament plays an important role. This supports the filament redox model on the ReRAM operation. V C 2013 American Institute of Physics.

show abstract

Model of metallic filament formation and rupture in NiO for unipolar switching

Cited by 109 publications

References 30 publications

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

Reversible post-breakdown conduction in aluminum oxide-polymer capacitors

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

Contact Info

Product

Resources

About