Model of Metamaterial Based on Graphene Scrolls and Carbon Nanotubes with Negative Refractive Index

Siahlo, A.I.; Poklonski, N. A.; Вырко, С. А.; Ratkevich, S. V.

doi:10.1134/s1063782618140294

Semiconductors

2018

DOI: 10.1134/s1063782618140294

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Model of Metamaterial Based on Graphene Scrolls and Carbon Nanotubes with Negative Refractive Index

A.I. Siahlo

N. A. Poklonski

С. А. Вырко

et al.

Abstract: The structure of a new metamaterial with negative permittivity and permeability that is made of periodically positioned graphene/boron nitride nanoscrolls and carbon nanotubes is proposed. The parameters of the metamaterial structure with a negative refractive index for the frequency of an electromagnetic wave within the visible range (namely, from near infrared to yellow) are calculated.

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Cited by 2 publications

References 15 publications

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Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design

Poklonski¹,

Вырко²,

Siahlo³

et al. 2019

Mater. Res. Express

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We review the principles of formation, physical properties, and current or envisaged applications for a wide range of carbon allotropic forms. We discuss experimental and theoretical advances relating to staple zero-, one-, and two-dimensional carbon structures, such as fullerenes, carbon nanotubes, and graphene. In addition we emphasize research on emerging carbon allotropes (carbon nanoscrolls, funnels, etc) that result from combining or deforming allotropic forms with well-defined dimensionality. Such materials fall in-between clearly delineated dimensional categories and consequently exhibit unique characteristics that are promising for electronic, optical, and mechanical applications. We also consider other approaches to tuning properties of carbon-based materials, such as chemical functionalization, intentional introduction of structural disorder, and placement of guest atoms or molecules inside hollow structures. Finally, we discuss the properties of and experimental methods for studying zero-dimensional systems (paramagnetic nitrogen impurity atoms) in diamond matrix. The review emphasizes the interplay between the various material properties of carbon-based nanostructures and the designs for nanoscale devices that rely on synergistic combinations of these properties. For example, an electromechanical vibrator, a strain sensor, a nanodynamometer, and a nanoelectromechanical memory cell that we describe exploit both electronic and nanomechanical properties of low-dimensional carbon structures, a reed switch and a magnetic field sensor use magnetic and nanomechanical properties, a maser based on nitrogen-doped diamond uses thermal and optoelectronic properties, etc. All presented device concepts have been validated by calculations, and some have been implemented experimentally.

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Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design

Poklonski¹,

Вырко²,

Siahlo³

et al. 2019

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

Mathematical and computer simulation of semiconductor systems of various dimensions and the elements of device structures based on them

Poklonski

2021

Vescì Akademìì navuk Belarusì. Seryâ fizika-matematyčnyh navuk

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The article, in the form of a minireview, reflects the results of theoretical, and partly experimental investigations of the electrical, optical and magnetic phenomena in three-dimensional, two-dimensional, one-dimensional and zero-dimensional systems and elements of device structures made of germanium, silicon, carbon and other chemical elements carried out at the Faculty of Physics of Belarusian State University over the past 25 years.

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Model of Metamaterial Based on Graphene Scrolls and Carbon Nanotubes with Negative Refractive Index

Cited by 2 publications

References 15 publications

Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design

Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design

Mathematical and computer simulation of semiconductor systems of various dimensions and the elements of device structures based on them

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