Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures

Strahberger, C.; Vogl, P.

doi:10.1103/physrevb.62.7289

Cited by 42 publications

(35 citation statements)

References 47 publications

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“…The tight-binding Hamiltonian matrix is composed of three parts: the left and right leads, and the middle region, where the incoming Bloch waves from the left lead are scattered into outgoing Bloch states of the right lead. By solving the Schrödinger equation for the tight-binding Hamiltonian, we determine the transfer coefficients t k ⊥,i →k ⊥,j (E, k ), which describe the probability of tunneling from the incoming state k ⊥,i to the outgoing state k ⊥,j for given electron energy E and wave vector parallel to the surface k [8]. The tunneling current j is given by,…”

Section: Theoretical Modelmentioning

confidence: 99%

Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures

Sankowski

Kacman

Majewski

et al. 2006

Physica E: Low-dimensional Systems and Nanostructures

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The Landauer-Büttiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both TMR and Zener spin current polarization, the calculated values agree well with those observed experimentally. The role played in the spin dependent tunneling by carrier concentration and magnetic ion content is also studied.

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Section: Theoretical Modelmentioning

confidence: 99%

Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures

Sankowski

Kacman

Majewski

et al. 2006

Physica E: Low-dimensional Systems and Nanostructures

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“…In our studies, we follow closely numerically very efficient procedure introduced previously [21], which we have generalized to the case with spin -orbit coupling. We use semiempirical tight-binding formalism to calculate electronic states of the system for given || k and E. To describe the band structure of the bulk GaAs and bulk AlAs, we use the nearest neighbor (NN) 3 5 sp d s* tightbinding Hamiltonian (resulting in 20 spin -orbitals for each anion or cation), with the spin -orbit coupling included [22].…”

Section: Theoretical Modelmentioning

confidence: 99%

Coherent spin transport in magnetization modulated semiconductor heterostructures

Sankowski¹,

Oszwałdowski²,

Kacman³

et al. 2007

Physica Status Solidi (b)

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The Landauer -Büttiker formalism combined with the tight-binding transfer matrix method is employed to model vertical coherent spin transport within magnetization modulated semiconductor heterostructures based on GaAs. This formalism provides excellent physical description of recent experiments concerning the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. In particular the formalism reproduces strong decrease of the observed effects with external bias. We ascribe this decrease to the band structure effects. In the framework of the developed model, the intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is also studied and compared to experimental results.

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“…along the wire and the 0-th slice taken as the contact. We introduce the matrix χ s of all the outgoing/decaying solutions in all the leads [9,10]. χ s is block diagonal, the blocks for separate leads are calculated independently.…”

Section: Retarded Green's Function In Tight Binding Modelsmentioning

confidence: 99%

Application of the R-matrix method in quantum transport simulations

2010

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The R-matrix method based on a continuous model is generalized as to become applicable to the atomistic transport simulations with a tight-binding device Hamiltonian. The device elements are introduced as arbitrary atomic clusters in the device area and freedom in the device fragmentation can be used to reduce computations. In the ballistic regime, the best computer performance is achieved by taking individual atoms as the device elements. Non-equilibrium current carrying electronic states are constructed by the forward-backward R-matrix propagation scheme which does not require large computer operations and mass storage. The method is applied to quantum transport in p-Si nanowire with random vacancies and surface roughness.

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Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures

Cited by 42 publications

References 47 publications

Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures

Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures

Coherent spin transport in magnetization modulated semiconductor heterostructures

Application of the R-matrix method in quantum transport simulations

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