Modeling a Double-Halo-Doping Carbon Nanotube FET in DC and AC Operations

Abstract

Double-Halo-Doping carbon nanotube field effect transistor (DH-CNTFET) has been recently suggested as a reliable and efficient device for the nanoscale applications which is a potential candidate to obsolete the conventional CNTFET (C-CNTFET), eventually. In this respect, the work aims to present an accurate compact analytical model for the drain current which is applicable in the different SPICE levels for circuit simulations. The paper captures the fundamental physic of a conventional CNTFET in order to develop a comprehensive and accurate analytical drain current model for the DH-CNTFET structure. Regarding the DH-CNTFET structure, important decision variables in the cases of ballistic carrier velocity, electron mobility, source/drain series resistance, threshold voltage, drain induced barrier lowering (DIBL) factor, fermi level to the band edge in the source region, subthreshold swing factor and band-to-band tunneling factor are introduced and globally searched by the PSO algorithm to achieve the most accurate relation for the drain current. The suggested compact analytical model is successfully compared with the realistic data extracted from the numerical simulation of the DH-CNTFET by full quantum mechanical Green , s function approach. The results revealed that the compact analytical model predicts the drain current of the DH-CNTFET, accurately. As the other worthwhile effort, the work has proposed a compact analytical model for the gate-source and gate-drain capacitances providing it very attractive and suitable for the simulations under the circuit in the SPICE different levels.

Semiconducting SWCNT Photo Detector for High Speed Switching Through Single Halo Doping

“…At the start, the initial values are derived from Eqs. ( 5) and (6). The values in the dark conditions for G n E ð Þ and G p E ð Þ are used.…”

“…FET toy, a Nano device simulator, was used for this purpose [5]. It has been found that the Double-Halo-Doping CNTFET is a potential candidate in the study to establish the maintenance of threshold voltage and drain-induced barrier lowering (DIBL) [6]. The two-dimensional non-equilibrium Green function, solved self-consistently with Poisson's equation of the Schottky barrier, establishes that the carbon nanotube field-effect transistor (SB-CNTFET) structures decrease the leakage current [7].…”

Analysis of transition metal dichalcogenides materials based gas sensor using non‐equilibrium green's function

“…The most common 2D materials are graphene, transition metal dichalcogenides and black phosphorous (BP). Graphene cannot be used in FETs as it has zero bandgap structure (under specific conditions), although it can be tailored but the mobility of charge carriers gets degraded 13–15 . BP has potential applications in nanoelectronic and optoelectronic devices.…”

“…Graphene cannot be used in FETs as it has zero bandgap structure (under specific conditions), although it can be tailored but the mobility of charge carriers gets degraded. [13][14][15] BP has potential applications in nanoelectronic and optoelectronic devices. It shows bipolar behavior and has high electron/hole mobility [1000cm 2 (V-Sec) À1 ] but proper selection of insulating material for BP-based FET is still a challenge as BP suffers from a high density of interface trap charge (ITCs) which reduces the mobility of charge carriers.…”

A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors

“…various short channel effects [2] including source/drain charge sharing, drain-induced barrier lowering (DIBL), subsurface punch through and velocity saturation. Due to limitations of MOSFET, conventional nano-scale SOI MOSFET which uses novel configuration gives better electrical performance but the complexity of these devices pushes the need to find out an alternative of FET devices [3]. In order to reduce these effects and enhance the device performance, carbon allotropes i.e.…”