Modeling aging effects of IGBTs in power drives by ringing characterization

Ginart, Antonio; Roemer, Michael; Kalgren, P.W.; Goebel, Kai

doi:10.1109/phm.2008.4711463

Cited by 41 publications

(34 citation statements)

References 8 publications

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“…One of the experimentally identified precursors to failure has been reported in [3], IGBTs were aged with self heating. The changes in current ringing characteristics during switching were observed.…”

Section: Related Workmentioning

confidence: 99%

“…Research interest in this area has increased in recent years and the notion that electronic devices fail without any previous indication of damage progression has changed as the research community continues to identify precursors of failure in a variety of electronic components. Current research efforts in prognostics for these power devices focuses on: a) identification of the failure modes and mechanisms [1,2]; b) identification of precursors of failure which serve as leading indicators of failure and play an essential role in the prediction of RUL [1][2][3]; c) development of accelerated aging methodologies and systems to accelerate the aging process of test devices by accelerating the aging process while continuously measuring key electrical and thermal parameters [1,3,4]; d) development of physics based degradation models to enable model-based prognostics [3]; and e) development of remaining life prediction algorithms with proper understanding and modeling of the different sources of uncertainty affecting the RUL estimate [5]. This paper describes an accelerated aging system that allows for the understanding of the effects of failure mechanisms and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and prediction of remaining useful life.…”

Section: Introductionmentioning

confidence: 99%

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Accelerated aging system for prognostics of power semiconductor devices

Celaya

Wysocki

Ващенко

et al. 2010

2010 Ieee Autotestcon

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Abstract-Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

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Section: Related Workmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Accelerated aging system for prognostics of power semiconductor devices

Celaya

Wysocki

Ващенко

et al. 2010

2010 Ieee Autotestcon

Self Cite

View full text Add to dashboard Cite

show abstract

“…In the case of MOSFETs, several methods have been proposed to detect faults in MOSFET, for example, short-circuit and open-circuit faults. Previous work on MOSFETs has focused primarily on reliability designs (Azoui et al, 2011), predicting the remaining useful life of MOSFETs using off-line accelerated aging tests (Smet et al, 2011), and developing degradation models based on accelerated life tests (Oukaour et al, 2011 (Ginart et al, 2008). An online non-intrusive method of obtaining the degradation state of MOSFETs based on the Volterra series has been proposed (Wu et al, 2014); however, these methods are complex.…”

Section: Introductionmentioning

confidence: 99%

Failure model and detecting method for MOSFET degradation in DC-DC power converters

Wu¹,

Dong²,

Guan³

et al. 2014

Sci. Res. Essays

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MOSFET is the most commonly used devices in DC-DC power converters, and its performance is important to the prognosis and health management of power. The paper proposes a degradation analysis model for MOSFET in DC-DC power converters. A method for detecting the degradation of MOSFET is also introduced. Simulations have shown that the method can predict deterioration in the performance of MOSFET. The simulation results are good agreement with the theory.

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“…Currently, most ALTs and HALTs for power electronics in the reliability domain focus on thermal stress either through temperature or power cycling [4] and mechanical stress [5]. Within the prognostics domain, the work done so far has mainly looked into electro-thermal cycling induced thermal fatigue ( [6], [7] and [8]). However, purely electrical stress related failures are quite common to power MOSFETs as they are prone to damage from radiation, electro-static discharge (ESD) and lightning surges.…”

Section: Introductionmentioning

confidence: 99%

Accelerated aging with electrical overstress and prognostics for power MOSFETs

Saha

Celaya

Ващенко³

et al. 2011

IEEE 2011 EnergyTech

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Abstract-Power electronics play an increasingly important role in energy applications as part of their power converter circuits. Understanding the behavior of these devices, especially their failure modes as they age with nominal usage or sudden fault development is critical in ensuring efficiency. In this paper, a prognostics based health management of power MOSFETs undergoing accelerated aging through electrical overstress at the gate area is presented. Details of the accelerated aging methodology, modeling of the degradation process of the device and prognostics algorithm for prediction of the future state of health of the device are presented. Experiments with multiple devices demonstrate the performance of the model and the prognostics algorithm as well as the scope of application.

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Modeling aging effects of IGBTs in power drives by ringing characterization

Cited by 41 publications

References 8 publications

Accelerated aging system for prognostics of power semiconductor devices

Accelerated aging system for prognostics of power semiconductor devices

Failure model and detecting method for MOSFET degradation in DC-DC power converters

Accelerated aging with electrical overstress and prognostics for power MOSFETs

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