Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

Vorob’ev, A.N.; Komissarov, A.E.; Segal, A.S.; Makarov, Yu.N.; Karpov, S. Yu.; Zhmakin, Alexander I.; Rupp, Roland

doi:10.1016/s0921-5107(98)00497-8

Cited by 12 publications

(8 citation statements)

References 6 publications

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“…[4]) by chemical vapor deposition (CVD). Horizontal [7] and vertical cold-wall [8][9][10], chimney [11], horizontal hot-wall [12][13][14][15][16][17][18] and planetary reactors [19] can be used. More recently, chimney-type reactors working at high temperature (>2000 K) with hot-walls were developed to increase the growth rate to 25-100 mm/h [11,20,21].…”

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

Mézière

Ucar

Blanquet

et al. 2004

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

Mézière

Ucar

Blanquet

et al. 2004

Journal of Crystal Growth

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“…Si enrichment in the vapour can lead to Si droplet formation on the growing surface [9,24,25]. An inappropriate temperature gradient will accelerate the formation of Si droplets on the growing surface [26][27][28]. The temperature difference, T , between the growing surface and the surface of the powder source defines the temperature gradient.…”

Section: Resultsmentioning

confidence: 99%

New type of defects in SiC grown by the PVT method

Zhu

et al. 2005

J. Phys.: Condens. Matter

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The quality of SiC crystals grown by the physical vapour transport (PVT) method was studied by means of optical microscopy and scanning electron microscopy (SEM) observations with the aid of etching by molten KOH. New types of defects were found, including triangular etching pits, shallow hexagonal etching pits and dendritic silicon inclusions in 4H-SiC. The triangular etching pits usually appear on the C face with a size comparable with the irregular dark etching pits due to the micropipes, while the shallow hexagonal etching pits were observed on the Si face with a size comparable with that due to the micropipes. The silicon inclusions exhibit dendritic shape up to several microns like those usually observed in metal alloys. In addition, 4H-SiC and 6H-SiC domains with different polarities in the growth surface were found to develop from the same seed. The interface of 4H-SiC and 6H-SiC was one of the sources for inducing the micropipes.

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“…A reduced set of chemical reactions was developed on the basis of literature data. 5,6 Postprocessing of the simulation results included analysis of the mass fractions of the products of gas phase reactions at different points in the simulated reactor as well as the mass flux of the species adsorbed onto the surface. The achieved mass fluxes where used to calculate the growth rate of SiC epilayers.…”

Section: Simulation and Experimentsmentioning

confidence: 99%

Two- and three-dimensional simulation of chemical vapor deposition SiC epitaxial growth processes

Koshka

Melnychuk

Mazzola

2003

Journal of Elec Materi

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Three-dimensional (3-D) computational fluid dynamics (CFD) tools were applied to enhance capabilities of the two-dimensional (2-D) simulation in predicting such important characteristics of the SiC Chemical Vapor Deposition (CVD) epitaxial growth process as growth rate, growth rate nonhomogeneity in longitudinal and transverse directions, and growth morphology. Depletion of the precursors in the gas phase along the growth direction was shown to be one of the most important sources for the growth rate nonhomogeneity. The rate of precursor depletion along the growth direction in the center of the susceptor is different from that closer to the sides of the susceptor due to the nonhomogeneous temperature profile in the transverse direction. This difference causes a significant increase in the growth rate away from the center of the susceptor toward the reactor walls. Simulated precursor supersaturation above the growth surface was the highest at the leading edge of the susceptor and near the reactor walls, which correlates with the morphology degradation in those regions.

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Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

Cited by 12 publications

References 6 publications

Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

New type of defects in SiC grown by the PVT method

Two- and three-dimensional simulation of chemical vapor deposition SiC epitaxial growth processes

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