2021
DOI: 10.1016/j.jprocont.2021.06.002
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Modeling and application of Czochralski silicon single crystal growth process using hybrid model of data-driven and mechanism-based methodologies

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Cited by 30 publications
(10 citation statements)
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“…Fourier heat conduction equation (heat equation) is an important PDE, which describes how the temperature in a region changes with time. For example, in the process of growing monocrystalline silicon by the Czochralski method, a stable and suitable thermal field is the key to growing a perfect monocrystalline silicon, so accurate simulation of the thermal field is an important research [37,46]. This paper considers the heat conduction of monocrystalline silicon part.…”
Section: Heat Conduction Equationmentioning
confidence: 99%
“…Fourier heat conduction equation (heat equation) is an important PDE, which describes how the temperature in a region changes with time. For example, in the process of growing monocrystalline silicon by the Czochralski method, a stable and suitable thermal field is the key to growing a perfect monocrystalline silicon, so accurate simulation of the thermal field is an important research [37,46]. This paper considers the heat conduction of monocrystalline silicon part.…”
Section: Heat Conduction Equationmentioning
confidence: 99%
“…Currently, monocrystalline silicon is manly produced by the Czochralski method (80-90%) [36,37], in which purified polycrystalline silicon is melted in a crucible from highly pure quartz in a high-vacuum furnace. This method is used to grow the largest single crystals.…”
Section: Mono-and Polysilicon Ingots Productionmentioning
confidence: 99%
“…The greater the sintering temperature it is possible the faster the crystal formation process [25]. The size of the temperature also affects the shape and size of the gap and also affects the structure of crystal growth [26]. Sintering temperatures can be determined from thermal experiments such as DTA, DTG, and DSC.…”
Section: Sintering Processmentioning
confidence: 99%