Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Décobert, J.; Dupuis, N.; Lagrée, Pierre‐Yves; Lagay, N.; Ramdane, A.; Ougazzaden, A.; Poingt, F.; Cuisin, C.; Kazmierski, C.

doi:10.1016/j.jcrysgro.2006.10.005

Cited by 38 publications

(36 citation statements)

References 10 publications

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“…This intensity decreases when moving to the centre, indicating that the indium composition is higher inside the mask aperture and decreases from the edge to the centre of the aperture. This composition variation inside the SAG mask aperture was theoretically predicted [1]. On the other hand, the InAs-like frequency displays two behaviors with respect to the position inside the mask aperture, depending on the mask geometry: a non-monotonous variation for the A7 and B7 masks (W m ¼ 140 mm) and monotonous increasing variation for the A8 and B8 masks (W m ¼ 160 mm).…”

Section: Resultssupporting

confidence: 63%

“…A mechanism, combining the composition-only variation of the InAs-like mode and the strain effect, could explain the non-monotonous spatial variation of the InAslike mode for the A7 and B7 masks. Indeed, the A7 and B7 masks have the same masked area width W m (140 mm), smaller than that for the A8 and B8 masks (160 mm), indicating a higher indium composition for the latter (A8, B8), as theoretically and experimentally demonstrated [1]. In all cases, the indium content inside the aperture is larger than the one in the unmasked broad region, i.e.…”

Section: Resultssupporting

confidence: 56%

“…ppm. The growth conditions were optimized to achieve perfect selectivity [1]. In the unmasked broad region, the layer composition was evaluated from micro-photoluminescence and XRD measurements.…”

Section: Methodsmentioning

confidence: 99%

“…AlGaInAs system offers many advantages over the GaInAsP system for InP-based optoelectronic devices, including an improved electrons confinement and hole density uniformity in quantum wells due to its larger conduction-band offset and smaller valence-band offset [1]. In the selective area growth (SAG) regime, the surface of analysis is limited to some tens of microns and as a result the characterization technique must have a spatial resolution in the micron range.…”

Section: Introductionmentioning

confidence: 99%

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Micro-Raman for compositions characterization of selective area growth of AlxGayIn1−x−yAs materials by metal-organic vapor-phase epitaxy

Hamady

Dupuis

Décobert

et al. 2008

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 63%

Section: Resultssupporting

confidence: 56%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Micro-Raman for compositions characterization of selective area growth of AlxGayIn1−x−yAs materials by metal-organic vapor-phase epitaxy

Hamady

Dupuis

Décobert

et al. 2008

Journal of Crystal Growth

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“…Consequently, the layer quality is very sensitive to growth rates. It is well known that in III-V SAG the filling factor (the opening area vs. the total surface area) causes significant variation in growth rates [18,19]. Therefore, the loading effect causes a concern about layer quality dependence on local filling factors.…”

Section: Resultsmentioning

confidence: 99%

Growth of high quality InP layers in STI trenches on miscut Si (001) substrates

Wang

Leys

Nguyen

et al. 2011

Journal of Crystal Growth

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In this work, we report the selective area epitaxial growth of high quality InP in shallow trench isolation (STI) structures on Si (0 0 1) substrates 61 miscut toward (1 1 1) using a thin Ge buffer layer. We studied the impact of growth rates and steric hindrance effects on the nano-twin formation at the STI side walls. It was found that a too high growth rate induces more nano-twins in the layer and results in InP crystal distortion. The STI side wall tapering angle and the substrate miscut angle induced streric hindrance between the InP facets and the STI side walls also contribute to defect formation. In the [ 1 0] orientated trenches, when the STI side wall tapering angle is larger than 10°, crystal distortion was observed while the substrate miscut angle has no significant impact on the InP defect formation. In the [ 1 0] trenches, both the increased STI tapering angle and the substrate miscut angle induce high density of defects. With a small STI tapering angle and a thin Ge layer, we obtained extended defect free InP in the top region of the [1 1 0] trenches with aspect ratio larger than 2.

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Structural Characterization of Multi‐Quantum Wells in Electroabsorption‐Modulated Lasers by using Synchrotron Radiation Micrometer‐Beams

et al. 2010

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Advanced optoelectronic devices, the backbone of modern communication technology, require the monolithic integration of different functions at chip level. An example of devices fulfilling this requirement are multi-quantum well (MQW) electroabsorption-modulated lasers (EMLs) employed in long-distance, high-frequency optical fiber communications technology. Such devices are realized by using the selective area growth (SAG) technique. Optimization of the growth parameters is carried out by empirical approaches as direct structural characterization of the MQW is not possible with laboratory X-ray sources, owing to the micrometer-variation of composition and thickness inherent to the SAG technique. Micrometer-resolved X-ray (m-X-ray) beam available at third generation synchrotron radiation sources, such as the ID22 at the European Synchrotron Radiation Facility (ESRF), allowed us to directly measure the determinant structural parameters of MQW EML structures such as well and barrier widths and mismatches with a 2 mm spatial resolution.In more detail, optoelectronic devices, widely used in the generation and detection of optical signal for telecom and datacom applications, consist of different III-V semiconductors alloys deposited on suitable substrates. The deposition can be performed by different techniques that are based on the crystal rebuilding of a semiconductor used as substrate, such as metal organic vapor phase epitaxy (MOVPE). [1,2] The reaction takes place between free atoms and the substrate's surface with the rebuilding of the crystal lattice. During the growth different layers are sequentially and uniformly deposited on the entire substrate, resulting in the aimed structure relative to the specific device function (e.g., LED, laser, amplifier, modulator, photodiode, waveguide, etc.).As an example, uncooled distributed feedback (DFB) lasers, operating in the second window of telecommunications at 1310 nm, are MQW semiconductor lasers directly modulated at high frequency (up to 10 Gb s À1) and are a key element for connections typically up to 10 km. For longer distances a directly modulated laser cannot be used. The devices operate at 1550 nm (third-window) to take advantage of the limited fiber attenuation. However, in the presence of chromatic-dispersion on a standard single-mode fiber at this wavelength, the high positive chirp [3] of the optical pulses, generated by directly modulated DFB, severely limits the propagation span ($10 km at 10 Gb s À1). For 40-80 km propagation of 10 Gb s À1 optical signals, external modulation is needed. An external MQW electroabsorption modulator (EAM) can produce near-zero or even negatively chirped pulses, allowing propagation spans of more than 80 km. An EML, [4,5] obtained by monolithic integration of an EAM with a constant-injected DFB laser (Fig. 1b), is often the most convenient and compact solution. The modulation of the laser emission is ensured by the switching between an opaque and transparent state of the EAM due to the Stark effect [6] (Fig. 1c) induced by a...

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Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Cited by 38 publications

References 10 publications

Micro-Raman for compositions characterization of selective area growth of AlxGayIn1−x−yAs materials by metal-organic vapor-phase epitaxy

Micro-Raman for compositions characterization of selective area growth of AlxGayIn1−x−yAs materials by metal-organic vapor-phase epitaxy

Growth of high quality InP layers in STI trenches on miscut Si (001) substrates

Structural Characterization of Multi‐Quantum Wells in Electroabsorption‐Modulated Lasers by using Synchrotron Radiation Micrometer‐Beams

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