Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides

Scanning Tunneling Spectroscopy of Insulating Self-Assembled Monolayers on Au(111)

“…44 On the basis of these assumptions, we can estimate the leakage current density through insulating SAMs on Au(111) to the first degree of approximation and compare them to theoretical estimates of the leakage current through thin SiO 2 layers on Si. 8 The molecular leakage current density J(V) through a SAM can be expressed as where G(V) is represented by the conductance spectra at η ∼ 0.5 and πr 2 is the approximate cross-sectional area of a molecule conducting the flow of electrons. The latter parameter can be derived from the molecular periodicities of the SAMs; we infer from previous structural studies that r DDT ) 0.21 nm and r RC10TS ) 0.6 nm.…”

“…SiO 2 layers with comparable leakage current densities were calculated to have thicknesses of 1.0 and 1.5 nm, respectively. 8 Although this comparison is semiquantitative at …”

“…For silicon dioxide (SiO 2 ), recent studies indicate that the leakage current will increase by almost 12 orders of magnitude as the thickness changes from 3.5 to 1.5 nm. 7 Quantum-mechanical calculations suggest a minimum SiO 2 thickness of 1.5-2.0 nm for chip standby power requirements, 8 although a more optimistic estimate of 1.2 nm has been suggested on the basis of the fundamental physical limits of SiO 2 as a gate dielectric. 9 At this length scale variations in oxide thickness by as little as one atomic layer on a Si wafer could result in drastic variations in device performance, making it very difficult to maintain device tolerances.…”

Analytical Model of Tunneling Current by High Dielectrics and Study of High-k Gate Stack Structure

“…The quantum mechanical investigation in which wave nature of electron is emphasizing and becomes essential if the magnitude of the potential is comparable to the wavelength of deBroglie of electrons that is λ = h /√(3m * kT). At room temperature deBroglie wavelength is approximately 1.5nm [14]. Modern MOSFET near the interface with thin gate oxide has very thin potential well.…”

Steady and Transient State Analysis of Gate Leakage Current in Nanoscale CMOS Logic Gates

“…During the fabrication process a displacement of even a few SiO 2 molecules can cause a significant variation in T ox [4]. This leads to a difference between the desired value of T ox and the actual T ox obtained after fabrication.…”