2007
DOI: 10.1557/proc-0989-a12-06
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Modeling and Characterization of the Hydrogenated Amorphous Silicon Metal Insulator Semiconductor Photosensors for Digital Radiography

Abstract: Because of the inherent desired material and technological attributes such as low temperature deposition and high uniformity over large area, the amorphous silicon (a-Si:H) technology has been extended to digital X-ray diagnostic imaging applications. This paper reports on design, fabrication, and characterization of a MIS-type photosensor that is fully process-compatible with the active matrix a-Si:H TFT backplane. We discuss the device operating principles, along with measurement results of the transient dar… Show more

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Cited by 3 publications
(3 citation statements)
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“…Since the thicknesses of the doped layers are about the same (~25 nm) in both p-i-n and m-i-s structures, the noticeable difference in the magnitude of the spectra cannot be ascribed to this mechanism. The disadvantage of the m-i-s sensor is that the charge generated in i-layer cannot be fully readout through the blocking dielectric layer [7]. The ratio of transferred (Q out )-to-generated …”
Section: Resultsmentioning
confidence: 99%
“…Since the thicknesses of the doped layers are about the same (~25 nm) in both p-i-n and m-i-s structures, the noticeable difference in the magnitude of the spectra cannot be ascribed to this mechanism. The disadvantage of the m-i-s sensor is that the charge generated in i-layer cannot be fully readout through the blocking dielectric layer [7]. The ratio of transferred (Q out )-to-generated …”
Section: Resultsmentioning
confidence: 99%
“…The photosensitive area of the segmented structures is 1×1 mm 2 . Further details on the device design, fabrication, and characterization under illumination including spectral response measurements can be found elsewhere [6]. To measure the transient currents at elevated temperatures, an experimental setup was built.…”
Section: Methodsmentioning
confidence: 99%
“…The transient dark current originates from traps at the semiconductor-insulator interface and a-Si:H bulk trap states [4], [5]. The results reported in our previous work show that the noise component associated with the transient dark current can be largely eliminated by adjusting the biasing conditions [6]. In this work we analyze the transient current in a-Si:H-based MIS structures under different biasing conditions and temperatures.…”
Section: Introductionmentioning
confidence: 90%