2022 IEEE 31st Microelectronics Design &Amp; Test Symposium (MDTS) 2022
DOI: 10.1109/mdts54894.2022.9826934
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Modeling and Design of Low Threshold Voltage D-mode GaN HEMT

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“…A detailed comparison of these two HEMT structures is presented in the following table 2. Several research [77][78][79][80] have confirmed that D-mode HEMTs are more suitable to utilize for THz related applications than E-mode HEMTs due to their actual experimental RF performance results. In addition, several nanomaterials, especially 2D materials like GR, MXene and BP, exhibit superior electron mobility and high carrier velocities for the efficient detection performance at terahertz frequencies.…”
Section: Field Effect Transistormentioning
confidence: 99%
“…A detailed comparison of these two HEMT structures is presented in the following table 2. Several research [77][78][79][80] have confirmed that D-mode HEMTs are more suitable to utilize for THz related applications than E-mode HEMTs due to their actual experimental RF performance results. In addition, several nanomaterials, especially 2D materials like GR, MXene and BP, exhibit superior electron mobility and high carrier velocities for the efficient detection performance at terahertz frequencies.…”
Section: Field Effect Transistormentioning
confidence: 99%