Abstract:The structure of rf glow discharges in Ar at 13.56 MHz is described, making use of a relaxation continuum model. The model includes consideration of the relaxation kinetics for the momentum and energy of charged particles. The discharge structure and plasma property are modeled using molecular quantities (i.e. , collision cross sections, radiative lifetimes, etc.) and macroscopic transport quantities for charged particles. Spatiotemporal distributions for the field and the net production rate and density of pa… Show more
“…results which follow directly from (25), (26), (32) and the relationships (34). The distinction between two sets of transport coefficients vanishes when either R=0 or when the reactive cross sections are not energy selective [13,38].…”
Section: Periodic Steady State and Transport Coefficients (I) Densitymentioning
confidence: 98%
“…This set of equations is sufficient to determine``flux'' transport coefficients [38] w, D | | and D = for specified field frequency and cross sections.``Bulk'' transport coefficients [38] (B) W, (B) D | | and (B) D = , as given by (34), require a second order density gradient expansion (c.f. (31)) and are dealt with in [42].…”
Section: Nonuniform Swarms: Electron Diffusion Coefficients (I) Basicmentioning
confidence: 99%
“…The R.C.T. model [33,34] and associated effective electric field are also briefly discussed as an example of an empirical model which follows as an approximation from our more general theory.…”
“…results which follow directly from (25), (26), (32) and the relationships (34). The distinction between two sets of transport coefficients vanishes when either R=0 or when the reactive cross sections are not energy selective [13,38].…”
Section: Periodic Steady State and Transport Coefficients (I) Densitymentioning
confidence: 98%
“…This set of equations is sufficient to determine``flux'' transport coefficients [38] w, D | | and D = for specified field frequency and cross sections.``Bulk'' transport coefficients [38] (B) W, (B) D | | and (B) D = , as given by (34), require a second order density gradient expansion (c.f. (31)) and are dealt with in [42].…”
Section: Nonuniform Swarms: Electron Diffusion Coefficients (I) Basicmentioning
confidence: 99%
“…The R.C.T. model [33,34] and associated effective electric field are also briefly discussed as an example of an empirical model which follows as an approximation from our more general theory.…”
“…The theory, at its lowest level, is similar in spirit to the 'relaxation continuum' model of Makabe et al (1992), but the origin and definition of the collisional relaxation times is more precise. In essence, momentum-transfer theory provides a scheme for systematic approximation of collision terms in moment equations generated by integrating Boltzmann's equation for each charged species with 1, mv,~mv2, ... over all particle velocities v. In the lowest approximation, momentum-transfer theory consists in employing collision terms of the same mathematical form as for the Maxwell (constant collision frequency) model, but with cross sections evaluated according to actual energy dependencies.…”
Section: Rf Swarm Model Equations (2a) Momentum-transfer Theory Bamentioning
Starting from the general momentum and energy balance equations for charged particle swarms in a gas, as furnished by momentum-transfer theory, we obtain expressions for mean velocity and mean energy of an electron swarm in an r.f. electric field under spatially uniform conditions, in the frequency range WTe > 1, where Te is the energy collisional relaxation time.If Te is a decreasing function of energy, it is shown that the cycle-averaged mean energy reaches a maximum at a certain frequency. Physical arguments are provided to support this result and the prediction is verified for a constant elastic cross section model by direct numerical solution of Boltzmann's equation.
“…Additional interesting results in the research of production and properties of negative ions in Ar/CF 4 can be found (for example, in [10][11][12]). …”
Section: Introduction and State Of The Artmentioning
Abstract:In this paper we present the results of research into a relation(s) between the bias voltage of an oxide/a-Si:H/c-Si sample during formation of very-thin and thin oxides and the resulting distribution of oxide/semiconductor interface states in the a-Si:H band gap. Two oxygen plasma sources were used for the first time in our laboratories for formation of oxide layers on a-Si:H: i) inductively coupled plasma in connection with its application at plasma anodic oxidation; ii) rf plasma as the source of positive oxygen ions for the plasma immersion ion implantation process. The oxide growth on a-Si:H during plasma anodization is also simply described theoretically. Properties of plasmatic structures are compared to ones treated by chemical oxidation that uses 68 wt% nitric acid aqueous solutions. We have confirmed that three parameters of the oxide growth process -kinetic energy of interacting particles, UV-VIS-NIR light emitted by plasma sources, and bias of the samples -determine the distribution of defect states at both the oxide/a-Si:H interface and the volume of the a-Si:H layer, respectively. Additionally, a bias of the sample applied during the oxide growth process has a similar impact on the distribution of defect states as it can be observed during the bias-annealing of similar MOS structure outside of the plasma reactor.
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