Modeling and experimental result analysis for high-power VECSELs

Zakharian, Aramais R.; Hader, J.; Moloney, Jerome V.; Koch, S. W.; Lutgen, S.; Brick, P.; Albrecht, T.; Grötsch, Stefan; Luft, J.; Späth, W.

doi:10.1117/12.479503

Cited by 4 publications

(8 citation statements)

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“…A detailed microscopic analysis of the strong influence of thermal resistance on the laser characteristics can be found in. 21,22 To sum up, it was found that in order to achieve high output power complete removal of the substrate is required. Using a pump area of 0.106mm 2 , a thermal resistance of less than 10K/W can be achieved for bottom-emitters.…”

Section: Thermal Managementmentioning

confidence: 99%

“…Current development in semiconductor disk lasers concentrates on high power devices, 1, 2 alternative wavelengths, 7-14 passively mode-locked pulsed lasers, [15][16][17][18][19] single frequency operation 20 and with increasing emphasis on the microscopic modelling. 21,22 In the following, we demonstrate high-power emission covering the wide range of technologically-relevant nearinfrared wavelengths between 900nm and 1100nm.…”

Section: Introductionmentioning

confidence: 98%

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Multiwatt semiconductor disk lasers for near-infrared wavelengths

et al. 2004

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Optically-pumped semiconductor disk lasers offer high output power in combination with good beam quality. By optimizing epitaxial quality as well as thermal resistance, 1, 2 we have demonstrated more than 8W of continuous-wave, room-temperature emission at 1000nm. These high power-levels are tied to high opticalconversion efficiencies of more than 40%. Whereas available wavelengths for solid-state disk lasers are restricted to a set of atomic transitions, semiconductor disk lasers can be conveniently tailored to meet almost any wavelength. Building upon the high-power results at 1000nm, we have extended the emission range towards 900nm as well as 1100nm. Two prominent examples are devices realized at 920nm and 1040nm, in each case demonstrating several Watts of laser output.

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Section: Thermal Managementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Multiwatt semiconductor disk lasers for near-infrared wavelengths

et al. 2004

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“…In the case of optically pumped lasers such as vertical external cavity surface emitting lasers ͑VECSELs͒, a semiconductor chip is pumped with as much as 150 W continuous wave ͑CW͒ over a 500 m diameter pump spot. 1 This optical pumping results in power densities in excess of 19 kW/ cm 2 and translates to an active region temperature of over 375 K. 1 Any further increase in active region temperature can result in significantly reduced gain, which induces thermal rollover of the laser. In the absence of any thermal management, heat in the active region allows the laser to operate at only a few watts before thermal rollover.…”

Section: Introductionmentioning

confidence: 99%

Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers

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Ahirwar

Jaeckel

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors demonstrate the growth of polycrystalline GaAs thin films on polycrystalline chemical vapor deposition ͑CVD͒ diamond by low-temperature molecular beam epitaxy. The low-temperature GaAs ͑LT-GaAs͒ layer is easily polished compared to the CVD diamond, and this process results in a reduction of rms surface roughness from Ͼ50 to Ͻ5 nm. This makes the LT-GaAs on diamond layer an ideal wafer-bonding interface for high-power semiconductor devices. The samples were grown at 0.2 m / h with a substrate temperature of 250°C and a 1:8 III/V beam equivalent pressure ratio. The samples were analyzed by x-ray powder diffraction, atomic force microscopy for surface roughness, and in situ reflective high-energy electron diffraction during molecular beam epitaxy growth. The authors also measure the thermal conductivity of the GaAs layer on CVD diamond using pump-probe time domain thermoreflectance.

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“…A detailed microscopic analysis of the strong influence of thermal resistance on the laser characteristics can be found in Ref. 20.…”

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confidence: 99%

“…A fully microscopic analysis of the physical mechanism within OPS-disk lasers is provided in Ref. 20.…”

mentioning

confidence: 99%