Modeling and Integration Phenomena of metal-metal direct bonding technology

Abstract

Direct metal bonding represents an advanced joining technology that allows vertical stacking with electrical conduction and even heat dissipation. Direct metal bonding is performed at room temperature, under ambient air and atmospheric pressure. Thus, for most metals used as bonding layers, it involves a surface metal oxide layer. The bonding interface saddles with a trapped oxide layer. This study focuses on the analysis and modeling of metal-metal direct bonding with regards to integration stages such as annealing or layer stacking.

SAB-Enabled Room Temperature Hybrid Bonding

“…Those kind of defects can affect both SAB and hydrophilic bondings. Secondly, as elucidated by L. Di Cioccio et al in their 2014 study [9], the Cu2O layer is naturally present on the copper during hydrophilic bonding and first annealing stage due to copper oxidation by the interfacial water. This oxide layer acts as a source for vacancies formation into the Cu pads, as it undergoes a dewetting phenomenon during the annealing process.…”

Looking into the future of Nanoelectronics in the Diversification Efficient Era

“…http://engine.scichina.com/doi/10.1007/s11432-016-5567-z [8,11,[52][53][54][55], could profit by collective fabrication on a Silicon interposer, takes into account packaging at wafer level. The choice of organic, glass or silicon substrate depends on applications by challenging performance, thermal losses, compatibility to the environment, reliability and cost.…”

“…In order to speed up new applications development, Parallel 3D [52][53][54][55] has been proven to "cram more and more components in a package" (RF, MEMS, Passives, etc.). This approach benefits to performance http://engine.scichina.com/doi/10.1007/s11432-016-5567-z and power consumption at the system level.…”

Characterization of interfacial morphology of low temperature, low pressure Au–Au thermocompression bonding

“…Applications include, but are not limited to, hermetically sealed MEMS sensors, 1) CCD=CMOS cameras, 2) wafer-scale integration, and low pitch-dimension packaging scaling. 3) While both Cu 4) and Al 5) are also used for metal thermocompression bonding, Au is especially attractive for thermocompression bonding because it does not form a native oxide, it can be deposited by a wide variety of techniques with good pitch control and resolution, it is a biocompatible material, and it can be used in harsh environments. Several prior studies of Au thermocompression bonding [6][7][8][9] have focused on relatively higher bonding temperatures (260 °C and higher) and longer times.…”