2015
DOI: 10.1109/tvlsi.2014.2384042
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Modeling and Layout Optimization for Tapered TSVs

Abstract: Through-silicon-via (TSV) offers vertical connections for 3-D ICs. Due to its large dimensions and nonideal etching process, TSVs layout needs to be carefully optimized to balance peak current density and delay for digital circuit. This brief investigates the TSVs tapering effect (which is an inevitable byproduct of deep reactive Ion etchingbased manufacturing) and its impact on the TSVs electrical properties. We show that the current crowding effect is more severe in realistic tapered TSVs than ideal cylindri… Show more

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Cited by 12 publications
(2 citation statements)
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“…In addition, TSVs have to maintain a certain distance from each other, due to mechanical [Jung et al 2012;Lu et al 2016b] and signal integrity [Liu et al 2011] considerations. The TSV placement problem is to place the clock TSVs and control TSVs such that each TSV is located inside the layout area and outside other TSVs' keep-out-zones (KOZs) [Lu and Srivastava 2015b;Lu et al 2016c].…”
Section: Methodsmentioning
confidence: 99%
“…In addition, TSVs have to maintain a certain distance from each other, due to mechanical [Jung et al 2012;Lu et al 2016b] and signal integrity [Liu et al 2011] considerations. The TSV placement problem is to place the clock TSVs and control TSVs such that each TSV is located inside the layout area and outside other TSVs' keep-out-zones (KOZs) [Lu and Srivastava 2015b;Lu et al 2016c].…”
Section: Methodsmentioning
confidence: 99%
“…A vertical electrical connection called through-silicon-vias (TSVs) may act as media for transporting power supply or signals among layers of a 3D IC. Several techniques to construct these TSVs are discussed in literature [1][2][3].…”
Section: Introductionmentioning
confidence: 99%