Modeling and Measurements of Electrical and Thermal Memory Effects for RF power LDMOS

Tornblad, O.; Wu, Bin; Dai, Wei; Blair, C.; Ma, G.; Dutton, R.W.

doi:10.1109/mwsym.2007.380245

Cited by 5 publications

(4 citation statements)

References 4 publications

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“…Upper and lower IM3 components are 2.142 and 2.139 GHz, respectively. Asymmetries in distortion products for 1 MHz and larger tone spacing are typically related to the frequency dependence of the output bias network at baseband [11]. This effect is evident in Fig.…”

Section: Linearity Analysis For Realistic Ldmosmentioning

confidence: 91%

Linearity Analysis of Lateral Channel Doping in RF Power MOSFETs

Chen¹,

Tornblad

Dutton³

2009

IEEE Trans. Microwave Theory Techn.

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Advanced harmonic balance simulation capabilities have been used to investigate linearity behavior in RF power laterally diffused metal-oxide semiconductor (LDMOS) devices with different laterally graded channel doping profiles. Harmonic balance analysis provides relevant device information from device-level simulations and yields performance metrics of RF circuits. The linearity behavior of simple quasi-1-D structures with different graded channel doping profiles was investigated; the analysis was then extended to a more realistic power LDMOS device. The third-order intermodulation distortion product reveals the important role of lateral channel doping. The analysis lays groundwork for device optimization for improved linearity.Index Terms-Channel engineering, laterally diffused metaloxide semiconductor (LDMOS), linearity.

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Section: Linearity Analysis For Realistic Ldmosmentioning

confidence: 91%

Linearity Analysis of Lateral Channel Doping in RF Power MOSFETs

Chen¹,

Tornblad

Dutton³

2009

IEEE Trans. Microwave Theory Techn.

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“…It has been reported in the literature [4], [6] that, if a PA is excited with a signal having narrow bandwidth, the thermal memory effects dominates the electrical memory effects. However the boundary between frequency regions where the thermal memory effects dominates the electrical memory effects is dependent on the device, circuit and packaging technology; and, it wasn't well defined.…”

Section: Identification Of Memory Effect and Depthmentioning

confidence: 99%

“…al. [6] measured the power level of IMD for an amplifier excited with two-tone signal while the frequency separation was swept from 5 kHz to 20 MHz. It was observed that, when the frequency separation was 5 kHz, the asymmetry between the power levels of the lower and upper intermodulation products (IMDL and IMDU) was high.…”

Section: Identification Of Memory Effect and Depthmentioning

confidence: 99%

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Memory polynomial with shaped memory delay profile and modeling the thermal memory effect

Yüzer

Bassam

Ghannouchi

et al. 2013

2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)

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This paper presents a proposal for a new memory polynomial modeling technique with non-uniform delay taps to capture the thermal memory effects in power amplifiers. In the proposed modeling structure, each order of the memory polynomial is assigned a different memory delay. The delay profile is an exponentially shaped function, instead of equal unit delays for all memory polynomial branches. Three different metrics, the memory effect modeling ratio (MEMR) and the normalized mean square error (NMSE) and spectrum error (SE) are used to benchmark the proposed exponentially shaped delay profile memorial polynomial model performance against previously published models, namely the memoryless, the unit delay and sparse delay memory based polynomial models. The model coefficients of four models are extracted for three different excitation signals, which were selected as a 64-QAM signal around 2.14 GHz with 20 kHz, 30 kHz and 40 kHz bandwidths, ensuring that the thermal memory effects dominate the electrical memory effects. It is shown that the proposed model outperforms all the previously published models for all three excitation signals used in the experiment.

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Association of memory terms in a power amplifier modeling functions to the circuit components

Yüzer

Dursun

2018

Journal of Electromagnetic Waves and Applications

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Modeling and Measurements of Electrical and Thermal Memory Effects for RF power LDMOS

Cited by 5 publications

References 4 publications

Linearity Analysis of Lateral Channel Doping in RF Power MOSFETs

Linearity Analysis of Lateral Channel Doping in RF Power MOSFETs

Memory polynomial with shaped memory delay profile and modeling the thermal memory effect

Association of memory terms in a power amplifier modeling functions to the circuit components

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