Modeling and Numerical Insights of TiSe₂ Compound‐Based Photodetector

Abstract

This study presents a comprehensive simulation of a TiSe2‐based photodetector, an optoelectronic device adept at converting a spectrum of electromagnetic radiation spanning ultraviolet (UV), visible, and infrared wavelengths into electrical signals. The TiSe2 absorber material is characterized by a narrow direct bandgap of 1.2 eV, endowing the photodetector with superior optical and electronic attributes that enhance its photodetection capabilities. In‐depth analysis of the energy band diagram, the current‐voltage (J‐V) characteristics, and spectral responses is conducted. This article involves in methodical variations in the thickness, doping levels, and defect density across different layers to achieve optimal performance. The photodetector's current, JSC, and voltage, VOC are recorded at 37.30 mA cm−2 and 0.795 V, in turn. Additionally, the device achieves a peak responsivity, R of 0.67 A W−1 and a detectivity, D* of 12.9 × 1014 Jones at a wavelength of 920 nm. Notably, the spectral response is significantly enhanced between 760 and 1010 nm, indicating the photodetector's proficient detection of near‐infrared (NIR) light. The findings underscore the potential of TiSe2 as an effective material for photodetector applications, marking a significant advancement in the field and paving the way for future research endeavors in photodetector technology.