Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP

Pitts, O.J.; Benyon, W.; SpringThorpe, A. J.

doi:10.1016/j.jcrysgro.2013.10.019

Cited by 6 publications

(3 citation statements)

References 13 publications

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“…This suggests that increasing the growth temperature can significantly improve the doping effectiveness of Si 2 H 6 . The difference between ECV concentration and Hall concentration shrinks as the temperature rises, demonstrating that the doping effectiveness of Si 2 H 6 and its activation efficiency rises with the temperature [20][21][22][23][24][25].…”

Section: The Influence Of Growth Temperaturementioning

confidence: 98%

High Uniformity 6-Inch InGaP Epitaxial Growth

et al. 2023

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The growth of 6-inch In0.485Ga0.515P has been examined in this study. The effects of growth temperature, the V/III ratio, and the H2 total flow on solid composition, growth rate, and crystal quality have been systematically investigated and discussed. Additionally, the effect of growth conditions on doping efficiency has been investigated. Finally, the relationship between electrical uniformity, optical uniformity, and the growth conditions of the 6-in epitaxial layer is discussed. At a growth temperature of 600 °C and a V/III of 250, a high uniformity 6-in InGaP epitaxial layer with an electrical uniformity of 0.33% and optical uniformity of 0.03% was produced. InGaP was grown by the metal-organic chemical vapor deposition method in an Aixtron 2800G4 reactor. High resolution X-ray diffraction (HRXRD), photoluminescence (PL), sheet resistance, electrochemical capacitance-voltage (ECV), and the Hall effect were used to characterize the characteristics of InGaP epitaxial layers.

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Section: The Influence Of Growth Temperaturementioning

confidence: 98%

High Uniformity 6-Inch InGaP Epitaxial Growth

et al. 2023

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“…Due to the large conduction-band offset and low valence-band offset, AlGaInAs series of III–V materials that take advantage of good high-temperature performance, suitable photon energy and high material gain have become indispensable for 1.3–1.5 μm InP-based laser diode [ 3 , 4 , 5 ]. AlGaInAs QW lasers exhibit higher modulation-speed, more superior high-temperature performance than the frequently-used InGaAsP/InP lasers [ 6 , 7 , 8 ]. However, the epitaxial growth process of the quaternary AlGaInAs QW structure is very complex, leading to some complicated localized states produced in the active region.…”

Section: Introductionmentioning

confidence: 99%

Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence

et al. 2020

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AlGaInAs quantum well (QW) lasers have great potential in the application fields of optical communications and eye-safety lidars, owing to the advantages of good gain performance. A large amount of experimental evidence indicated that carrier dynamic affects the resonant frequency and modulation response performance of QW lasers. However, the mechanism of carrier dynamic in AlGaInAs QW structure is still ambiguous for complicated artificial multilayers. In this paper, the carrier dynamic of AlGaInAs QW structure was investigated by temperature-dependent time-resolved photoluminescence (TRPL) in the range of 14 to 300 K. Two relaxation times (a fast component and a slow one) have a major impact on the PL emission spectra of the AlGaInAs QW below 200 K. The carriers prefer a fast decay channel in the low temperature regime, whereas the slow one a higher temperature. An unconventional temperature dependence of carrier relaxation is observed in both decay processes. The carriers’ lifetime decreases with the temperature increasing till 45 K and then increases with temperature up to 250 K. It is quite different from that in the bulk semiconductor. The mechanism of temperature-dependent carrier relaxation at temperatures above 45 K is a combination of dark state occupation and a nonradiative recombination process.

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“…An aluminum gallium indium arsenic (AlGaInAs) material system is crucial for semiconductor diode lasers emitting at 1.3–1.55 μm, which has been widely used in optical fiber communications and photonic integrated circuits (PICs) owing to its advantages of high-speed operation, large gain, and external quantum efficiency [ 1 , 2 , 3 ]. A zinc-blended AlGaInAs compressive strained quantum well (QW) has substantially better electron confinement and material gain performance than the commonly used InGaAsP system, due to a larger conduction band offset [ 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence

et al. 2018

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An aluminum gallium indium arsenic (AlGaInAs) material system is indispensable as the active layer of diode lasers emitting at 1310 or 1550 nm, which are used in optical fiber communications. However, the course of the high-temperature instability of a quantum well structure, which is closely related to the diffusion of indium atoms, is still not clear due to the system’s complexity. The diffusion process of indium atoms was simulated by thermal treatment, and the changes in the optical and structural properties of an AlGaInAs quantum well are investigated in this paper. Compressive strained Al0.07Ga0.22In0.71As quantum wells were treated at 170 °C with different heat durations. A significant decrement of photoluminescence decay time was observed on the quantum well of a sample that was annealed after 4 h. The microscopic cathodoluminescent (CL) spectra of these quantum wells were measured by scanning electron microscope-cathodoluminescence (SEM-CL). The thermal treatment effect on quantum wells was characterized via CL emission peak wavelength and energy density distribution, which were obtained by spatially resolved cathodoluminescence. The defect area was clearly observed in the Al0.07Ga0.22In0.71As quantum wells layer after thermal treatment. CL emissions from the defect core have higher emission energy than those from the defect-free regions. The defect core distribution, which was associated with indium segregation gradient distribution, showed asymmetric character.

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Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP

Cited by 6 publications

References 13 publications

High Uniformity 6-Inch InGaP Epitaxial Growth

High Uniformity 6-Inch InGaP Epitaxial Growth

Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence

Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence

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