Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures

Smith, M.; McMahon, R.A.; Voelskow, M.; Skorupa, W.

doi:10.1063/1.1786650

Cited by 42 publications

(47 citation statements)

References 18 publications

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“…This issue was investigated more detailed by performing simulations of the temperature profile. These simulations are based on the wave transfer matrix method described by Smith et al, 60 where the given distributions as well as the resulting reflectivities are averaged over the flash lamp spectrum. Figure 8 illustrates the results of these simulations with respect to the time-dependent profiles of the surface temperatures for a blank silicon wafer, a silicon wafer covered with 1000 nm SiO 2 and a silicon wafer coated with a 10 nm ruthenium film.…”

Section: Studies On the Flash-enhanced Ald Of Aluminum-based Thin Filmentioning

confidence: 99%

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Henke

Knaut

Hoßbach

et al. 2015

ECS J. Solid State Sci. Technol.

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Within this work, flash lamp annealing (FLA) is utilized to thermally enhance the film growth in atomic layer deposition (ALD). First, the basic principles of this flash-enhanced ALD (FEALD) are presented in detail, the technology is reviewed and classified. Thereafter, results of our studies on the FEALD of aluminum-based and ruthenium thin films are presented. These depositions were realized by periodically flashing on a substrate during the precursor exposure. In both cases, the film growth is induced by the flash heating and the processes exhibit typical ALD characteristics such as layer-by-layer growth and growth rates smaller than one Å/cycle. The obtained relations between process parameters and film growth parameters are discussed with the main focus on the impact of the FLA-caused temperature profile on the film growth. Similar, substrate-dependent growth rates are attributed to the different optical characteristics of the applied substrates. Regarding the ruthenium deposition, a single-source process was realized. It was also successfully applied to significantly enhance the nucleation behavior in order to overcome substrate-inhibited film growth. Besides, this work addresses technical challenges for the practical realization of this film deposition method and demonstrates the potential of this technology to extend the capabilities of thermal ALD. Atomic layer deposition (ALD) is a specific thin film deposition method wherein film growth is based on a sequence of alternating saturated surface reactions. In a typical ALD process, this is realized by the alternating exposure of the substrate surface to two precursors, which are separated from each other by inert gas purging or chamber evacuation in order to prevent gas phase reactions. As a result, the film growth proceeds in a self-limiting manner and monolayer-by-monolayer, and thus, ALD enables the deposition of thin films with excellent uniformity and conformality as well as with sub-nanometer thickness control. Thanks to these unique characteristics, ALD has emerged as an important thin film deposition technique in semiconductor technology, e.g. in the fabrication of metal-insulator-metal (MIM) film stacks in high aspect ratio dynamic random access memory (DRAM) structures and gate dielectrics in transistors. In recent years, the use of ALD has also expanded into other fields such as optoelectronics, energy conversion and storage devices, micro-electro-mechanical-systems (MEMS) and nanotechnology. [1][2][3][4][5][6] Although a large number of materials have been deposited by ALD so far 1-6 for various applications, there are still a number of challenges in ALD. The deposition temperatures in ALD are mostly lower compared to chemical vapor deposition (CVD) processes due to the different mechanisms of film growth and the necessity to prevent precursor decomposition in order to keep the self-limiting growth behavior of ALD. As a consequence of the lower energy available for film formation, the films may not meet the properties required for the specific...

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Section: Studies On the Flash-enhanced Ald Of Aluminum-based Thin Filmentioning

confidence: 99%

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Henke

Knaut

Hoßbach

et al. 2015

ECS J. Solid State Sci. Technol.

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“…Therefore, we calculate the amount of reflected and transmitted energy as well as the energy deposited within the top silicon layer in the cases of SOI and sSOI. Using the matrix method for multiple reflections and transmissions at all interfaces, 14 we calculate the reflection and transmission at each interface and the absorption in each layer as functions of the wavelength of the incident light.…”

Section: Reflection and Absorption In Soi/ssoimentioning

confidence: 99%

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath

Buca

Trinkaus

et al. 2008

Journal of Applied Physics

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We present experimental results on the activation and diffusion behaviors of boron in silicon-on-insulator and strained silicon-on-insulator using standard rapid thermal processing treatments as well as flash lamp annealing. After boron implantation at different doses and at a low energy of 1 keV, samples were annealed to activate the dopants, and secondary ion mass spectrometry and Hall measurements were carried out to determine boron diffusion and the amount of activated dopants, respectively. In contrast to rapid thermal annealing, flash lamp annealing enables the activation without significant diffusion of dopants. In addition, we investigated the effect of coating the samples with antireflection layers to increase the absorbed energy during flash annealing. As a result, the activation was increased significantly to values comparable with the activation obtained with standard annealing. Furthermore, the relation between the observed boron diffusion and activation as a function of the implantation and annealing parameters is discussed in terms of the kinetics of the defects involved in these processes.

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“…A typical intensity profile of a 20 ms flash lamp pulse can be found in Ref. 2. The intensity I is given in arbitrary units.…”

Section: P196mentioning

confidence: 99%

“…Depending on the irradiance of the flash, this can cause strong thermal gradients in the wafers inducing thermal stress which can generate defects. 2 The aim of our investigations was to investigate dislocation generation and propagation during FLA. In addition, we modeled the temperature distribution and stress in a silicon wafer subjected to FLA and compared it to experimental results of dislocation propagation.…”

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Dislocation Generation and Propagation during Flash Lamp Annealing

Kissinger

Kot

Schubert

et al. 2015

ECS J. Solid State Sci. Technol.

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Dislocation generation and propagation during flash lamp annealing for 20 ms was investigated using wafers with sawed, ground, and etched surfaces. Due to the thermal stress resulting from the temperature profiles generated by the flash pre-existing dislocations propagate into the wafer from both surfaces during flash lamp annealing. A dislocation free zone was observed around 700 μm depth below the surface of a 900 μm thick sawed wafer. The dislocation propagation can be well described by a three-dimensional mechanical model. It was further demonstrated that in wafers being initially free of dislocations no dislocations are generated during flash lamp annealing. © The Author During the last years, thermal processing on the millisecond scale was developed first of all for the creation of shallow dopant profiles in high end electronic device technologies and for the thermal treatment of layers.1,2 Flash lamp anneals (FLA) or laser anneals are able to heat the silicon wafer within a few milliseconds to temperatures up to the melting point. Depending on the irradiance of the flash, this can cause strong thermal gradients in the wafers inducing thermal stress which can generate defects. The aim of our investigations was to investigate dislocation generation and propagation during FLA. In addition, we modeled the temperature distribution and stress in a silicon wafer subjected to FLA and compared it to experimental results of dislocation propagation. The results of modeling help to understand the experimental results. ExperimentalThe experimental flow can be seen in Fig. 1. The wafers used for the experiments were 150 mm in diameter and of a resistivity of about 10 cm. The concentration of interstitial oxygen was in the range of 6.9-7.1 × 10 17 cm −3 (DIN 50438/1, new ASTM F121-83). In order to investigate dislocation generation and propagation during FLA, wafers of different surface state were prepared. Part of the wafers, 900 μm in thickness, was just sawed, another part was also ground down to a thickness of 750 μm, and the remaining part was also etched after grinding down to a thickness of 680 μm. After subjecting these wafers to FLA for 20 ms in nitrogen, (110) cleavage planes perpendicular to the surface were etched by Secco etchant for 3 min for dislocation delineation. The FLAs were carried out for 20 ms with a normalized irradiance of 0.97 using the flash annealing tool of the Institute for Ion Beam Physics and Materials Research of the HZDR. A tool for flash annealing usually contains both, halogen lamps for pre-heating and xenon lamps for the flash. Descriptions of typical tools for flash lamp annealing can be found in Refs. 1 and 2. In our case, the wafer was pre-heated for about 2 min from the back side by halogen lamps up to a temperature of 800• C. This helps to reduce the thermal gradients, the wafer stress, and reduces the energy required by the flash to reach a certain temperature. Then, the flash was initiated by the xenon-lamps energized by discharging a capacitor unit. The wafer was placed betwe...

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Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures

Cited by 42 publications

References 18 publications

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Dislocation Generation and Propagation during Flash Lamp Annealing

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