2005
DOI: 10.1016/j.physe.2005.07.012
|View full text |Cite
|
Sign up to set email alerts
|

Modeling and simulation for the field emission of carbon nanotubes array

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

2
16
0

Year Published

2006
2006
2019
2019

Publication Types

Select...
6
3
1

Relationship

0
10

Authors

Journals

citations
Cited by 44 publications
(21 citation statements)
references
References 20 publications
2
16
0
Order By: Relevance
“…The enhancement factor is very depended on the aspect ratio and shape of the nanowires tips as well as the interspace distances between the nanowires. The effects of these structural parameters on the induced local electric fields between the two parallel plates were studied by these authors and reported previously [22][23][24][25][26][27][28][29][30][31]. Devices were designed considering gold, silver, and semiconductor ZnO as the materials for the nanowires.…”
Section: Simulation Resultsmentioning
confidence: 99%
“…The enhancement factor is very depended on the aspect ratio and shape of the nanowires tips as well as the interspace distances between the nanowires. The effects of these structural parameters on the induced local electric fields between the two parallel plates were studied by these authors and reported previously [22][23][24][25][26][27][28][29][30][31]. Devices were designed considering gold, silver, and semiconductor ZnO as the materials for the nanowires.…”
Section: Simulation Resultsmentioning
confidence: 99%
“…Calculation difficulties in these numerical methods arise due to the large nanotube aspect ratio and very long distance between cathode and anode in comparison with emitter height. Usually, these numerical results were generalized and simple fitting formulas of field enhancement factor for individual nanotube (Edgcombe & Valdrè, 2001;Edgcombe & Valdrè, 2002;Shang et al, 2007), for nanotube in space between parallel cathode and anode planes (Bonard et al, 2002a;Filip et al, 2001;Nilsson et al, 2002;Smith et al, 2005), and for a nanotube surrounded by neighboring nanotubes with a screening effect (Jo et al, 2003;Glukhova et al, 2003;Nilsson et al, 2000;Wang et al, 2005) were suggested. The main problem for such algebraic fitting formulas is the lack of a definitive proof of their accuracy.…”
Section: Electric Field and Field Enhancement Factor In Diode Configumentioning
confidence: 99%
“…When the distance between adjacent patterns of synthesizing CNFs is at least twice the CNF length, they found that the field strength focused on those CNFs was almost the same as a CNF standing alone. There are many reports on the optimization of FE properties with CNF array patterning that followed the reports of Nilsson et al [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]. In some these reports, the patterning of CNFs by lithography, which commonly uses semiconductor process technology, was explained.…”
Section: Introductionmentioning
confidence: 99%