Modeling and simulation issues in Monte Carlo calculation of electron interaction with solid targets

Ivin, Vladimir; Silakov, Mikhail; Babushkin, G. A.; Mangat, Pawitter J. S.; Nordquist, Kevin J.; Resnick, Douglas J.

doi:10.1016/s0167-9317(03)00351-4

Cited by 15 publications

(12 citation statements)

References 20 publications

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“…xrays [11,12]) with matter over several decades. Additionally, there have been many excellent studies of electron-solid interactions for a broad range of energies (20 eV-100 keV) [13][14][15][16][17][18][19][20][21][22]. This body of work has provided a foundation upon which our work with EUV has been built; however, the work we and Kozawa have done is quite distinct from previous studies in that the energy of EUV photons, and the secondary electrons created by these photons, is in a much lower energy range than most of the fundamental theoretical and experimental work.…”

Section: Introductionmentioning

confidence: 99%

Secondary Electrons in EUV Lithography

Torok

Herbol

et al. 2013

J. Photopol. Sci. Technol.

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Secondary electrons play critical roles in several imaging technologies, including extreme ultraviolet (EUV) lithography. At longer wavelengths of light (e.g. 193 and 248 nm), the photons are directly involved in the photochemistry occurring during photolysis. EUV light (13.5 nm, 92 eV), however, first creates a photoelectron, and this electron, or its subsequent daughter electrons create most of the chemical changes that occur during exposure. Despite the importance of these electrons, the details surrounding the chemical events leading to acid production remain poorly understood. Previously reported experimental results using high PAG-loaded resists have demonstrated that up to five or six photoacids can be generated per incident photon. Until recently, only electron recombination events were thought to play a role in acid generation, requiring that at least as many secondary electrons are produced to yield a given number of acid molecules. However, the initial results we have obtained using a Monte Carlo-based modeling program, LESiS, demonstrate that only two to three secondary electrons are made per absorbed EUV photon. A more comprehensive understanding of EUVinduced acid generation is therefore needed for the development of higher performance resists.

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Section: Introductionmentioning

confidence: 99%

Secondary Electrons in EUV Lithography

Torok

Herbol

et al. 2013

J. Photopol. Sci. Technol.

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“…Such a procedure has been employed by many authors. 5,9,10 However, the total stopping power S͑E͒ has been so far evaluated through the Bethe model 31 or its semiempirical modification by Joy and Luo. 32 In Fig.…”

Section: ͑3͒mentioning

confidence: 99%

“…Mechanisms of electron penetration and scattering in PMMA, as well as backscattering from the substrate ͑the proximity effect͒, have been addressed in detail by numerous Monte Carlo simulations. [1][2][3][4][5][6][7][8][9][10] Another approach which is more computationally efficient is reached by treating electron penetration through the kinetic transport theory. [11][12][13][14][15][16] These efforts have resulted in a comprehensive knowledge of electron trajectories in resists and distributions of deposited energy.…”

Section: Introductionmentioning

confidence: 99%

Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures

Aktary¹,

Stepanova²,

Dew³

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We report a three-dimensional (3D) simulation model based on the kinetic transport theory for calculating the distribution of PMMA fragments after an exposure to electron impact. The conditions employed for the modeling were chosen to resemble a typical electron beam lithography exposure. The model accounts for inelastic collisions of electrons in PMMA and resulting random main-chain scissions. We have considered gratings composed of parallel lines distanced by 10–50nm and exposed to electrons with energies of 10–60keV. By the model simulations, we have generated and analyzed the detailed 3D distributions of small PMMA fragments (one to ten monomers) that are soluble at the development stage and thus are responsible for the clearance in the gratings. In terms of the spatial distributions of soluble fragments, we have formulated the criteria that define the total clearance as well as the local grating development and investigated their dependence on the grating period, electron dose, and energy.

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“…Many researchers investigated earlier various aspects of electron penetration [2][3][4]. A lot of data are available [5][6][7][8][9] on transmission, refl ection and absorption of electrons in materials.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo study of medium-energy electron penetration in aluminium and silver

Aydın

Peker

2015

Nukleonika

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Abstract. Monte Carlo simulations are very useful for many physical processes. The transport of particles was simulated by Monte Carlo calculating the basic parameters such as probabilities of transmitted-refl ected and angular-energy distributions after interaction with matter. Monte Carlo simulations of electron scattering based on the single scattering model were presented in the medium-energy region for aluminium and silver matters. Two basic equations are required the elastic scattering cross section and the energy loss. The Rutherford equation for the different screening parameters is investigated. This scattering model is accurate in the energy range from a few keV up to about 0.50 MeV. The reliability of the simulation method is analysed by comparing experimental data from transmission measurements.

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Modeling and simulation issues in Monte Carlo calculation of electron interaction with solid targets

Cited by 15 publications

References 20 publications

Secondary Electrons in EUV Lithography

Secondary Electrons in EUV Lithography

Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures

Monte Carlo study of medium-energy electron penetration in aluminium and silver

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