Modeling and simulation of emissivity of silicon-related materials and structures

Abstract

A brief review of the models that have been proposed in the literature to simulate the emissivity of silicon-related materials and structures is presented. The models discussed in this paper include ray tracing, numerical, phenomenological, and semi-quantitative approaches. A semi-empirical model, known as Multi-Rad, based on the matrix method of multilayers is used to evaluate the reflectance, transmittance, and emittance for (Hotliner), and separation by implantation of oxygen (SIMOX) wafers. The influence of doping concentration and dopant type as well as the effect of the angle of incidence on the radiative properties of silicon is examined. The results of these simulations lead to the following conclusions: (1) at least within the limitations of the Multi-Rad model, near the absorption edge, the radiative properties of Si are not affected significantly by the angle of incidence unless the angle is very steep; (2) at low temperatures, the emissivity of silicon shows complex structure as a function of wavelength; (3) for SiO 2 /Si, changes in emissivity are dominated by substrate effects; (4) Hotliner has peak transmittance at 1.25 µm, and its emissivity is almost temperature independent; and (5) SIMOX exhibits significant changes in emissivity in the wavelength range of 1-20 µm.

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

“…In addition, the validity of this emissivity was confirmed from measurement of the Si substrate on a ceramic heater in the range of 100 to 700 • C at the same configuration in air. It was confirmed that the emissivity of Si was similar to the reported value (0.6 [20]), and the angle dependence was negligible. Furthermore, the measured sample temperature was not the temperature of the B implanted region.…”

Evaporative heat transfer from an electrowetted liquid ribbon on a heated substrate

“…Radiation from the exposed regions of the top surface is not considered, as the emissivity ε of polished silicon in the 3.7-5.1 μm wavelength is < 0.1 [32].…”

Silicon-integrated uncooled infrared detectors: Perspectives on thin films and microstructures

“…10 Two SiO 2 periods were found to give sufficiently high reflectivity at resonant wavelengths, owing to large contrast in indices of refraction. 11 An in-line array of 12 Si photoreceivers for optical interconnects was fabricated and operated with 40% (internal) quantum efficiency at 10 GHz and at wavelength λ ϭ 860 nm. Integration of the resonant cavity structure into a standard CMOS process flow could be challenging, as it requires special fabrication steps to form two buried SiO 2 layers in the silicon wafers and to grow device-quality epitaxial layer for the vertical p-i-n photodiodes.…”

“…Infrared detector technologies employ several principles, including photovoltaics, photoconductors, Si and Ge devices, microbolometers, pyroelectrics, and micromechanics. For high-speed mid-IR devices (e.g., [8][9][10][11][12] µm, Ͼ10 10 Hz), inter-sub-band transitions in quantum well IR photodetectors (QWIPs) 3 are operated at cryogenic temperatures to suppress dark current or uncooled with heterodyne or photovoltaic detection. 4 At longer wavelengths, IR camera technologies are being adapted to extend their sensitivities beyond the IR into the terahertz region for see-through object detection, security, and defense applications.…”