Modeling and simulation of resistivity of nanometer scale copper

Yarimbiyik, A. Emre; Schafft, H.A.; Allen, Richard A.; Zaghloul, Mona; Blackburn, David L.

doi:10.1016/j.microrel.2005.09.004

Cited by 38 publications

(22 citation statements)

References 5 publications

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“…As the film thickness scales down to 23 nm, the resistivity Figure 6. The ratio of film resistance to bulk resistance (ρ s /ρ 0 ) as a function of film thickness, as calculated based on the Fuchs-Sondheimer model [26][27][28]. p is the probability that an electron is specularly reflected from the surfaces.…”

Section: Discussionmentioning

confidence: 99%

Controlled formation and resistivity scaling of nickel silicide nanolines

Luo

Shi

et al. 2009

Nanotechnology

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We demonstrate a top-down method for fabricating nickel mono-silicide (NiSi) nanolines (also referred to as nanowires) with smooth sidewalls and line widths down to 15 nm. Four-probe electrical measurements reveal that the room temperature electrical resistivity of the NiSi nanolines remains constant as the line widths are reduced to 23 nm. The resistivity at cryogenic temperatures is found to increase with decreasing line width. This finding can be attributed to electron scattering at the sidewalls and is used to deduce an electron mean free path of 6.3 nm for NiSi at room temperature. The results suggest that NiSi nanolines with smooth sidewalls are able to meet the requirements for implementation at the 22 nm technology node without degradation of device performance.

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Section: Discussionmentioning

confidence: 99%

Controlled formation and resistivity scaling of nickel silicide nanolines

Luo

Shi

et al. 2009

Nanotechnology

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“…For consistency, the hypotheses applied in the simulation method were summarized here: (a) The free-electron-gas model (also denoted as the Drude model) [ 15 ] was applied. (b) Each electron moves along a straight line at the Fermi velocity until terminated at a boundary surface or after a sufficiently long path has been traveled [ 16 , 17 ]. (c) Only the Z component of free path contributes to the EMFP.…”

Section: Methodsmentioning

confidence: 99%

Influence of Nanopore Shapes on Thermal Conductivity of Two-Dimensional Nanoporous Material

Huang

Lin

et al. 2016

Nanoscale Res Lett

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The influence of nanopore shapes on the electronic thermal conductivity (ETC) was studied in this paper. It turns out that with same porosity, the ETC will be quite different for different nanopore shapes, caused by the different channel width for different nanopore shapes. With same channel width, the influence of different nanopore shapes can be approximately omitted if the nanopore is small enough (smaller than 0.5 times EMFP in this paper). The ETC anisotropy was discovered for triangle nanopores at a large porosity with a large nanopore size, while there is a similar ETC for small pore size. It confirmed that the structure difference for small pore size may not be seen by electrons in their moving.

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“…The statistical simulation method [10,11] applied here was based on the following hypothesis: electrons in the HNW are free electrons; each electron moves along a straight line with the Fermi velocity until either terminated at the boundary or until a long enough path has been traveled [17]. More details can be found in Refs.…”

Section: Electronic Thermal Conductivity Simulationmentioning

confidence: 99%