Modeling and Simulation of Si Grating Photodetector Fabricated Using MACE Method for NIR Spectrum

Surawijaya, Akhmadi; Chandra, Zefanya; Sulthoni, Muhammad Amin; Idris, Irman; Adiono, Trio

doi:10.3390/electronics12030663

Cited by 4 publications

(5 citation statements)

References 26 publications

(18 reference statements)

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“…According to the I – V curve, the dark minimum appears at the negative region of the voltage because of the capacitive hysteresis effect in the device, which happens possibly due to interface of electrodes and adjacent layers. These nonzero-crossing phenomenon were often observed in many photodetectors before. ,− Nevertheless, a typical rectifying characteristic was observed, suggesting the formation of a heterojunction between ETL, QD layer, and HTL. Upon irradiation of SWIR light, an open circuit voltage ( V oc ) and a short circuit current ( I sc ) generated, where I sc was increased linearly by increasing the illumination power densities, which signified the PD characteristics.…”

Section: Resultsmentioning

confidence: 76%

Solution-Processed InSb Quantum Dot Photodiodes for Short-Wave Infrared Sensing

Chatterjee,

Nemoto,

Ghosh

et al. 2023

ACS Appl. Nano Mater.

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Short-wave infrared (SWIR) photodiodes (PDs) based on colloidal semiconductor quantum dots (QDs) are characterized by the great possibility of device operation at a voltage bias of 0 V, spectral tunability, possible multiple-exciton generation, and high compatibility with printable technology, showing significant benefits toward medical applications. However, the light-absorbing layers of those PDs are hampered by a reliance on RoHS-restricted elements, such as Pb and Hg. Here, we report the SWIR PDs with light-absorbing layers of InSb QDs synthesized by a hot-injection approach using a combination of precursors, InBr 3 and SbBr 3 . Impurity-free and secondary phase-free synthesis was realized by optimized reaction temperature and time, precursor ratio, and quenching of reaction. The diameters of the QDs were controlled in the 5.1−7.8 nm range for strengthened confinement of photogenerated carriers and tuning of bandgaps between 0.64 and 0.98 eV. These QDs were processed to terminate their surfaces with small molecular ligands, giving a narrow interparticle distance between neighboring QDs in a light-absorbing layer sandwiched by carrier transportation layers. The resulting PDs achieve a photoresponse of ∼550 ms at 0 V, with combining the best values of responsivity and external quantum efficiency of 0.098 A/W and 10.1% under a bias voltage of −1 V at room temperature even in ambient air.

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Section: Resultsmentioning

confidence: 76%

Solution-Processed InSb Quantum Dot Photodiodes for Short-Wave Infrared Sensing

Chatterjee,

Nemoto,

Ghosh

et al. 2023

ACS Appl. Nano Mater.

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“…We simulate the transmission principle and design results of the DSMZI and its key components with methods of the finite element method and three-dimensional finite-difference-time-domain in Lumerical series tools. 15 At the same time, the transmission characteristics of the all optical solutions of first-order, second-order, and third-order C-LODE with the DSMZI are also studied. We use operational errors in the root-mean-square-error (RMSE) to quantitatively evaluate the performance of the proposed ODE solver based DSMZI 20 E Q -T A R G E T ; t e m p : i n t r a l i n k -; e 0 1 2 ; 1 1 4 ; 2 9 1…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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All optical third order tunable ordinary differential equation solutions based on double Sagnac rings coupled MZI on silicon waveguide chips

Xu,

He,

Yang

et al. 2023

J. Nanophoton.

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“…The generation rate at the specific frequency is obtained by Eq. ( 2 ) where Pabs is the absorbed power 41 , 42 . …”

Section: Simulation Methodsmentioning

confidence: 99%

A novel plasmonic metal–semiconductor–insulator–metal (MSIM) color sensor compatible with CMOS technology

Asl,

Ahmadi,

Rostami

2023

Sci Rep

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Color detection is one of the top interests in both biological and industrial applications. Specifically, the Determination of the light wave characteristics is vital in photonic technology. One of the features in the color sense that should be found out is its wavelength or color. In this work, we propose a structure that can be used to detect RGB colors separately in an efficient way. The proposed detector consists of the plasmonic filter sensing desired wavelength (red, green, and blue) and the PN diode to convert the received photons to the electrical current. At the input intensity of 1 mW × cm−2, the current density for blue, green, and red colors are 27, 35, and 48 µA × cm−2, respectively. It is shown that the intensities needed to obtain the current densities of 0.1 µA × cm−2 are 3.94, 2.98, and 2.25 µW × cm−2 for the blue, green, and red spectra respectively. It should mention that by using high-precision photodetector structures such as PIN diode, the minimum detectable level can be decreased. Simple adjusting for desired wavelength and linear operation for different input intensities are the characteristics of the designed structure. This detector is compatible with CMOS technology and can be easily utilized in numerous applications, such as charge-coupled devices, displays, and cameras.

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Modeling and Simulation of Si Grating Photodetector Fabricated Using MACE Method for NIR Spectrum

Cited by 4 publications

References 26 publications

Solution-Processed InSb Quantum Dot Photodiodes for Short-Wave Infrared Sensing

Solution-Processed InSb Quantum Dot Photodiodes for Short-Wave Infrared Sensing

All optical third order tunable ordinary differential equation solutions based on double Sagnac rings coupled MZI on silicon waveguide chips

A novel plasmonic metal–semiconductor–insulator–metal (MSIM) color sensor compatible with CMOS technology

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