Modeling and sizing of non-linear CMOS analog circuits used in mixed signal systems

Kundu, Sudip; Sarkar, Siddhartha; Mandal, Pradip; Islam, Aminul

doi:10.1007/s10470-018-1310-6

Cited by 3 publications

(3 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They are widely using laser and microwave-type annealing of infused dopants. These types of annealing are also widely used for the annealing of radiation defects generated during ion implantation [9][10][11][12][13][14][15][16][17]. Using these approaches gives the possibility of increasing the integration rate of elements in integrated circuits through the inhomogeneity of technological parameters generated by the inhomogenous distribution of temperature.…”

Section: Introductionmentioning

confidence: 99%

On Increasing Integration Rate of Field-Effect Heterotransistors in the Framework of a Bootstrap Switch

Pankratov

2024

IJASE

View full text Add to dashboard Cite

In the present time, several actual problems in solid-state electronics (such as increasing the performance, reliability, and density of elements in integrated circuits such as diodes, field-effect transistors, and bipolar transistors) are being intensively solved. To increase the performance of these devices, there is an interest in the determination of materials with higher values of charge carrier mobility. One way to decrease the dimensions of elements in integrated circuits is to manufacture them in thin-film heterostructures. In this paper, we introduce an approach to increasing the density of field-effect transistors in the framework of a bootstrap switch. In the framework of the approach, we consider manufacturing the above filter in a heterostructure with a specific configuration. Several appropriate areas of the considered heterostructure should be doped by diffusion or ion implantation. After the doping, the considered dopant and radiation defects should be annealed in the framework of the recently considered optimized scheme. We also consider an approach to decreasing the value of mismatch-induced stress in the considered heterostructure. The decrease in mismatch-induced stress could be decreased by radiation processing of appropriate areas of heterostructure. We introduce an analytical approach to analyzing mass and heat transport in heterostructures during the manufacturing of integrated circuits, taking into account spatial and temporal variations of the parameters of mass transport as well as the nonlinearity of the process.

show abstract

Section: Introductionmentioning

confidence: 99%

On Increasing Integration Rate of Field-Effect Heterotransistors in the Framework of a Bootstrap Switch

Pankratov

2024

IJASE

View full text Add to dashboard Cite

show abstract

“…They are widely using laser and microwave types of annealing of infused dopants. These types of annealing are also widely using for annealing of radiation defects, generated during ion implantation [9][10][11][12][13][14][15][16][17]. Using the approaches gives a possibility to increase integration rate of elements of integrated circuits through inhomogeneity of technological parameters due to generating inhomogenous distribution of temperature.…”

Section: Introductionmentioning

confidence: 99%

Untitled

2024

IJME

View full text Add to dashboard Cite

show abstract

“…At present, several significant problems in solid-state electronics, such as increasing the performance, reliability and density of integrated circuit elements (diodes, field-effect and bipolar transistors), are intensively addressed [1][2][3][4][5][6]. To increase the performance of these devices, there is a growing interest in identifying materials with higher values of charge carrier mobility [7]- [10].…”

Section: Introductionmentioning

confidence: 99%

Impact of Stress and Material Porosity on Double Boost DC-DC Converter Technology to Enhance Field-Effect Heterotransistors and Heterodiodes Density

Pankratov

2024

JTEC

View full text Add to dashboard Cite

Currently, several critical issues in solid-state electronics, such as improving the performance, reliability and density of integrated circuits elements like diodes, field-effect transistors, and bipolar transistors are being intensively addressed. One effective approach to reduce the dimensions of integrated circuits elements is to manufacture them in thin film heterostructures with an optimal manufacturing regime. In this paper, we explore methods to increase the density of field-effect heterotransistors and heterodiodes in the framework of a double boost DC-DC converter. We consider manufacturing this converter in a heterostructure with a specific configuration, where several required areas of the heterostructure should be doped by diffusion or ion implantation. Subsequently, the dopant and radiation defects should be annealed using an optimized scheme. Based on this approach, we provide recommendations for determining the optimal annealing time to achieve the best compromise between increasing density of integrated circuits elements and minimizing local overheating during their operation. We also propose a method to reduce the mismatch-induced stress in the heterostructure. We present an analytical approach to analyze mass and heat transport in heterostructures during the manufacturing of integrated circuits, accounting for mismatch-induced stress. This approach allows for the consideration of spatial and temporal variations in the parameters of technological processes, as well as their nonlinearity.

show abstract

Modeling and sizing of non-linear CMOS analog circuits used in mixed signal systems

Cited by 3 publications

References 21 publications

On Increasing Integration Rate of Field-Effect Heterotransistors in the Framework of a Bootstrap Switch

On Increasing Integration Rate of Field-Effect Heterotransistors in the Framework of a Bootstrap Switch

Untitled

Impact of Stress and Material Porosity on Double Boost DC-DC Converter Technology to Enhance Field-Effect Heterotransistors and Heterodiodes Density

Contact Info

Product

Resources

About