Modeling ARC less InGaP/GaAs Double Junction Solar cell with Tunneling Junction and BSF layer

Abstract

The present study addresses the structure of InGaP/GaAs dual-junction (DJ) solar cells by introducing new buffer and back surface field (BSF) layers as well as selecting the appropriate materials for the tunnel junction. Different performance parameters including open-circuit voltage (𝑉oc) short-circuit current density (𝐽𝑆𝐶), fill factor (𝐹𝐹), and solar cell efficiency (𝜂) were proposed and extracted for comparison with literature results. Then, I-V characteristic curves for the model were represented in graphs. The mentioned parameters, i.e. open-circuit voltage 𝑉𝑂𝐶, short-circuit current density 𝐽𝑆𝐶, fill factor 𝐹𝐹, and solar cell efficiency 𝜂 were, respectively, obtained as 18.50 𝑚𝐴/𝑐𝑚2, 2.862 V, 87/32 percent and 46.23 percent (1sun) under AM1.5G spectrum, which indicates the improvements achieved in this study.