Modeling carrier density dependent charge transport in semiconducting carbon nanotube networks

Schießl, Stefan P.; Vries, Xander de; Rother, Marcel; Massé, Andrea; Brohmann, Maximilian; Bobbert, Peter A.; Zaumseil, Jana

doi:10.1103/physrevmaterials.1.046003

Cited by 38 publications

(66 citation statements)

References 54 publications

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“…Much effort has been devoted to developing ways to dope nanotubes more strongly; however, this may not be desirable in all cases as there is an optimal level of doping (excess carrier density) above which the carrier mobility of nanotube films decreases (at least for semiconducting films) . Furthermore, as the resistivity of the nanotube film continues to be reduced, there comes a point when it is so low that it is no longer the limiting factor in performance due to other considerations and trade‐offs that must be made in regard to the front side metallization of larger active areas; as shown by analogy with state‐of‐the‐art commercial silicon PV in which the emitter resistivity can be in excess of 100 Ω sq −1 .…”

Section: Improving Performancementioning

confidence: 99%

Advances in Carbon Nanotube–Silicon Heterojunction Solar Cells

Tune

Flavel

2018

Advanced Energy Materials

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in this field as represented in Figure 2 and is broadly divided into two halves. The first half presents some essential background information on carbon nanotubes, particularly in relevance to their role in these kinds of solar cells, as well as a consideration of aspects such as thin film properties, device stability, scale-up, and operating mechanism, while the second half deals with the factors involved in improving performance.This review has been constrained almost exclusively to covering developments in the field of carbon nanotubes interfaced with monocrystalline silicon, though the field is also informed by other work being done in the associated areas of graphene-silicon and conducting polymer-silicon solar cells, as well as the use of nanotube films interfaced with polycrystalline silicon and other semiconductors, perovskites, organic photovoltaics, and more. This is partly in the interests of being able to provide a useful and informative level of technical detail while keeping the work to a manageable and digestible size both for those already working in the field and those new to it. It is also because although there are many parallels between, for example, the nanotube-silicon and polymer-silicon or graphene-silicon works, there are several important and fundamental differences, not the least of which may be the potential complexity/diversity of the operating mechanism(s) in the nanotube-silicon case. For information on these and other related types of photovoltaic device architectures incorporating carbon nanotubes, we refer the reader to Zielke et al., [49] Wang et al., [50] and Arnold et al., [51] as well as Li et al. [52] which also includes an overview of the carbon nanotube-silicon architecture as a part of the broader carbon-silicon theme. Table S1 of the Supporting Information provides a detailed and comprehensive list of published works in the carbon nanotube-silicon field along with various performance measurements, device structure parameters, and material properties. BackgroundAlthough once an exotic, poorly understood, and difficult to obtain material, carbon nanotubes are now relatively well known, well understood, and widely available from commercial suppliers. Briefly, single-walled carbon nanotubes (SWCNT) are very high aspect ratio cylinders of graphene in which the Heterojunctions of carbon nanotubes interfaced with silicon respond to light illumination and can be operated in the power regime as solar cells. Very significant advances have been made in the last 5 years both in terms of headline performance values and in fundamental understanding of the underlying operating principles, as well as the sophistication of the devices and studies being reported. The body of literature is growing rapidly, and the latest power conversion efficiency and active area records have now reached over 17% and 2 cm 2 , respectively. Thus, the authors believe that it is now a useful time for an evaluation of the current state-of-the-art and challenges going forward, as well as for a comprehensively ...

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Section: Improving Performancementioning

confidence: 99%

Advances in Carbon Nanotube–Silicon Heterojunction Solar Cells

Tune

Flavel

2018

Advanced Energy Materials

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“…[111] These observations can be explained if one perceives the different nanotubes as analogs to the energetic sites in a disordered semiconductor such as the chromophores in a conjugated polymer. [258] This simple model, which completely neglects the transport along the nanotubes, can reproduce experimental data for a network of five different nanotube chiralities in terms of the carrier density dependence of the mobility and the distribution of current among the different nanotubes. This idea can be tested with a very simple model of a random mixed carbon nanotube network as shown in Figure 12d, where each nanotube has its particular 1D conduction subband as the energy level.…”

Section: Charge Transportmentioning

confidence: 80%

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

Zaumseil

2018

Adv Elect Materials

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With the ability to produce large amounts of purely semiconducting and even monochiral dispersions of single-walled carbon nanotubes (SWCNT) their application as a bulk material in thin film devices on a large scale becomes feasible. Their physical properties, processing, and final devices are quite similar to those of semiconducting polymers. In the extreme case one may view carbon nanotubes as very long, rigid, and fully conjugated polymers. This analogy raises the question whether the knowledge accumulated over the last two decades of processing and studying conjugated polymers could be transferred to solution-processed nanotube devices. Here, the optical and electronic properties of both materials in solution and in thin films are discussed and compared with a focus on their application in optoelectronic devices. Some striking similarities and common issues are highlighted to show the connection between conjugated polymers and SWCNTs as 1D semiconductors.

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“…These gate‐voltage dependent EL spectra can be understood when considering the different bandgaps and thus conduction and valence band levels of the SWCNTs. Static and dynamic models of transport through the network can reproduce the experimental data . The EL of an LEFET can thus not only be used for spatial mapping of current paths (diffraction limited) but is also a result and reflection of the energy landscape for charge carriers in a mixed network.…”

Section: Lateral Single Layer and Ambipolar Lefetsmentioning

confidence: 99%

“…Furthermore, they can be used to gain unique insights into the charge transport in thin film semiconductors. Spatial maps of the electroluminescence from the channel as well as its spectral distribution depending on gate voltage and thus carrier density enable conclusions about contributions to the overall charge transport and current pathways by different fractions/areas of inhomogeneous semiconductors (e.g., conjugated polymers, single‐walled carbon nanotubes) that are not accessible otherwise. Hence, the LEFET is not a better or more complicated LED but a unique optoelectronic device with specific applications.…”

Section: Lefets Versus Ledsmentioning

confidence: 99%

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Zaumseil

2019

Adv Funct Materials

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Light-emitting field-effect transistors (LEFETs) combine switching and amplification with light emission and thus represent an interesting optoelectronic device. They are not limited anymore to a few examples and specific materials but are nearly universal for a wide range of semiconductors, from organic to inorganic and nanoscale. This review introduces the basic working principles of lateral unipolar and ambipolar LEFETs and discusses recent examples based on various solution-processed semiconducting materials. Applications beyond simple light emission are presented and possible future directions for lightemitting transistors with added functionalities are outlined. The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201905269.thus excluding vertical LEFETs, which have been demonstrated for some organic emitter systems. [5][6][7] We will start with LEFETs that do not rely on the injection of both holes and electrons in a single semiconducting layer but show unipolar charge transport and may include multiple semiconducting layers. This short section will be followed by an overview of truly ambipolar single-layer LEFETs, the different possible working principles and various emissive semiconductors with their advantages and drawbacks. The review will conclude with recent examples of LEFET applications that go beyond simple light-emission and take advantage of specific device properties to add functionalities that are difficult to achieve with other optoelectronic devices.

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Modeling carrier density dependent charge transport in semiconducting carbon nanotube networks

Cited by 38 publications

References 54 publications

Advances in Carbon Nanotube–Silicon Heterojunction Solar Cells

Advances in Carbon Nanotube–Silicon Heterojunction Solar Cells

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

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